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參數(shù)資料
| 型號： | S-2100R |
| 廠商： | Seiko Instruments Inc. |
| 英文描述： | 64-bit FUSE ROM(64位熔絲ROM) |
| 中文描述： | 64位保險(xiǎn)絲光盤（64位熔絲光盤） |
| 文件頁數(shù)： | 6/9頁 |
| 文件大小： | 63K |
| 代理商： | S-2100R |
64-bit FUSE ROM
S-2100R
Seiko Instruments Inc.
5
Program Mode Operation
By setting the CE/PE terminal to “H” level, the S-2100R enters the counter hold mode and at the same time enters the program
mode. *
5
Writing is done in program mode after selecting the address in read mode. *
6
Select the address, and supply “H” level to the
CE/PE terminal and “L” level to the DATA terminal, with the writing pulse V
PP
being supplied to the P
D
/V
PP
terminal. “L” level can
be written into the selected address only once. *
7
*
8
If you coutinue writing from address 1 to 64, the output of the COUNTER OUT terminal goes to “H” level, just like in the read
mode, and no more CLK pulses or writing pulses in program mode can be accepted.
Figure 5 Program mode timing
Address 2
output
Address 1
output
Address 1
output
Data input
Data input
t
PW
t
CDH
CE/PE
DATA
RST
PD/V
PP
CLK
t
CDS
t
DH
t
DS
*
5
*
6
In program mode, operate at VDD=5.0 V to assure reliability of the data writing.
The selection of addresses is possible only in read mode. Address 1 is selected by RST pulses and writing proceeds
sequentially from address 1 by CLK pulse.
All the memories are initially at “H” level, so writing into “L” can be done. When data is at “H” level, writing voltage cannot
be supplied to the memory.
Address 1 is selected again by the RST pulse. The addresses which are not written to “L” level are at “H” level, so writing
“L” level in these addresses is possible.
*
7
*
8
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