參數(shù)資料
型號: RUR1S1560S9A
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 參考電壓二極管
英文描述: 15A, 600V Ultrafast Diode
中文描述: 15 A, 600 V, SILICON, RECTIFIER DIODE, TO-263AB
封裝: D2PAK-3
文件頁數(shù): 1/5頁
文件大?。?/td> 112K
代理商: RUR1S1560S9A
RUR1S1560S Rev. A1
2002 Fairchild Semiconductor Corporation
RUR1S1560S
15A, 600V Ultrafast Diode
The RUR1S1560S is an ultrafast diode (t
rr
< 55ns) with soft
recovery characteristics. It has low forward voltage drop and
is of silicon nitride passivated ion-implanted, epitaxial planar
construction.
This device is intended for use as freewheeling/clamping
diode and rectifier in a variety of switching power supplies
and other power switching applications. Its low stored charge
and ultrafast soft recovery minimizes ringing and electrical
noise in many power switching circuits, thus reducing power
loss in the switching transistor.
Formerly developmental type TA9905.
Symbol
Features
Ultrafast Recovery. . . . . . . . . . . . . . . . . . . . . . . .t
rr
< 55ns
Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175
o
C
Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Avalanche Energy Rated
Applications
Switching Power Supplies
Power Switching Circuits
General Purpose
Packaging
JEDEC TO-263
Ordering Information
PART NUMBER
PACKAGE
BRAND
RUR1S1560S
TO-263
RUR1560
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263 variant in tape and reel, i.e. RUR1S1560S9A.
K
A
CATHODE
(FLANGE)
ANODE
CATHODE
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
P
D
E
AVL
T
J
, T
STG
PARAMETER
RUR1S1560S
600
600
600
15
30
200
100
20
-55 to 175
UNITS
V
V
V
A
A
A
W
mJ
o
C
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Repetitive Peak Surge Current (20kHz Square Wave)
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
Power Dissipation
Avalanche Energy (1A, 40mH)
Operating and Storage Temperature
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
THERMAL SPECIFICATIONS
R
θ
JC
Thermal Resistance Junction to Case
R
θ
JA
Thermal Resistance Junction to Ambient
NOTES:
T
L
T
pkg
300
260
o
C
o
C
1.5
60
o
C/W
o
C/W
CAUTION:
Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Data Sheet
[ /Title
(HUF7
6013P
3,
HUF76
013D3
S)
/Sub-
ject
(20A,
20V,
0.022
Ohm,
N-
Chan-
nel,
Logic
Level
Power
MOS-
FETs)
/Autho
r ()
/Key-
words
(Inter-
sil,
Semi-
con-
ductor,
N-
Chan-
nel,
Logic
Level
UltraF
ET
Power
MOS-
September 2002
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