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參數(shù)資料
| 型號： | RPI-579 |
| 元件分類： | 開關(guān) |
| 英文描述： | 5 mm SLOT WIDTH, 1 CHANNEL SLOTTED OPTICAL SWITCH TRANSISTOR OUTPUT |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 64K |
| 代理商： | RPI-579 |
RPI-579
Photointerrupter, General type
Applications
Printers
Facsimiles
AV equipment
Features
1) Heat resistance (170
°C).
2) Small gap (0.5mm) and good accuracy.
3) Quick response time.
4) Filter against visible ray is built-in.
Absolute maximum ratings (Ta
=25°C)
Electrical and optical characteristics (Ta
=25°C)
Electrical and optical characteristics curves
External dimensions (Unit : mm)
Optical center
Gap
7.5
5
(10)
4
0.4
2.5
10
0.7
13.8
6.0
0.5
0.8
A
1.6
(2.54)
2-0.45
Cathode
Collector
Anode
Emitter
2-
φ0.7±0.1
14(Bottom)
2.35±0.1
6.6±0.1
5.2
±
0.1
3.5
±
0.4
6
Through hole
4-
φ1.0
2-
φ0.8
10
2.54
5.2
8.95
2.6
2.35
Notes:
1. Unspecified tolerance
shall be
±0.2 .
2. Measurement in the bracket is
that of lead pin at base the mold.
3. Dimension in parenthesis are
show for reference.
4. Please be carefully not to receive
external disturbing light because
the top and back face emitter and
detector element isn't covered by case.
Fig.1 Relative output vs. distance ( )
Fig.4 Relative output vs. distance ( )
RELATIVE
COLLECTOR
CURRENT
:
Ic
(
%
)
DISTANCE : d (mm)
03
4
5
12
100
80
60
40
20
0
d
FORWARD
CURRENT
:
I
F
(mA)
AMBIENT TEMPERATURE : Ta (
°C)
20
0
20
40
60
80
100
10
40
50
30
20
0
FORWARD VOLTAGE : VF (
V)
FORWARD
CURRENT
:
I
F
(
mA
)
0
10
20
30
40
50
0.4
0.2
0.6
0.8
1.0
1.2
1.4
1.6
1.8
75
°C
50
°C
25
°C
0
°C
25°C
Fig.5 Power dissipation / collector power
dissipation vs. ambient temperature
Fig.2 Forward current falloff
Fig.9 Dark current vs. ambient
temperature
Fig.10 Output characteristics
Fig.11 Response time measurement circuit
td
tr
tf
10
%
90
%
RL
VCC
Input
Output
td
:
t r
:
t f
:
Delay time
Rise time (time for output current to rise
from 10% to 90% of peak current)
Fall time (time for output current to fall
from 90% to 10% of peak current)
Fig.7 Collector current vs. forward current
RELATIVE
COLLECTOR
CURRENT
:
Ic
(
%
)
DISTANCE : d (mm)
03
4
5
12
100
80
60
40
20
0
d
POWER
DISSIPATION
/
COLLECTOR
POWER
DISSIPATION
:
P
D
/Pc
(mW)
AMBIENT TEMPERATURE : Ta (
°C)
20
0
20406080
100
0
20
40
60
80
100
PC
PD
RELATIVE
COLLECTOR
CURRENT
:
Ic
(
%
)
AMBIENT TEMPERATURE : Ta (
°C)
40
20
0
20406080
100
0
20
40
60
80
100
120
160
140
Fig.8 Response time vs.
collector current
COLLECTOR
CURRENT
:
I
C
(mA)
COLLECTOR-EMITTER VOLTAGE : VCE (
V)
48
610
2
0
3.0
2.0
1.0
5mA
10mA
15mA
20mA
IF
=25mA
RESPONSE
TIME
:
t
(
s)
COLLECTOR CURRENT : Ic (
A)
10
50
100
20
500 1000
200
2000
10
20
50
200
100
RL
=5k
RL
=1k
RL
=2k
tr
tf
tr tf
tf tr
DARK
CURRENT
:
I
D
(nA)
AMBIENT TEMPERATURE : Ta (
°C)
0
25
50
75
100
25
1000
100
10
1
0.1
VCE
=10V
VCE
=30V
VCE
=20V
COLLECTOR
CURRENT
:
Ic
(mA)
FORWARD CURRENT : IF (mA)
0
1020304050
0
1
2
3
4
5
Fig.3 Forward current vs. forward voltage
Fig.6 Relative output vs. ambient
temperature
Parameter
Cut-off frequency
Non-coherent Infrared light emitting diode used.
Peak light emitting wavelength
Rise time
Fall time
Symbol
VF
IR
ICEO
λP
IC
fC
VCE(sat)
tr
tf
Min.
0.5
Typ.
1.3
800
0.1
10
Max.
1.6
10
0.5
0.5
Unit
VIF
=50mA
IF
=50mA
VR
=10V
VCE
=10V
VCE
=5V, IF=20mA
IF
=20mA, IC=0.1mA
VCC
=5V, IF=20mA, RL=100
A
nm
mA
V
s
10
s
1
MHz
950
nm
Conditions
Forward voltage
Reverse current
Dark current
Peak sensitivity wavelength
Collector current
Collector-emitter saturation voltage
Response time
Input
charac-
teristics
Output
charac-
teristics
Transfer
characteristics
Infrared
light
emitter
diode
Maximum sensitivity wavelength
λP
800
nm
This product is not designed to be protected against electromagnetic wave.
VCC
=5V, IC=1mA, RL=100
tr tf
Response time
10
s
Photo
transistor
Parameter
Symbol
IC
VCEO
PD
VR
IF
PC
VECO
Topr
Tstg
Limits
25 to +85
40 to +85
50
5
80
30
4.5
30
80
Unit
mA
V
mW
V
mA
mW
°C
Tsol
260 / 3
°C / s
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
Soldering temperture
Input
(LED
)
Output
photo-
transistor
(
)
1mm from the body bottom.
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