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參數(shù)資料
| 型號： | RP-21005 |
| 英文描述： | POWER CONTROLLERS|Rad Hard Hybrid. True I2t Protection |
| 中文描述： | POWER控制器|拉德硬混合。真I2t保護 |
| 文件頁數(shù)： | 3/14頁 |
| 文件大小： | 136K |
| 代理商： | RP-21005 |
3
Data Device Corporation
www.ddc-web.com
RP-21000 Series
G-12/02-300
Notes:
1. -55°C
≤
Case Temperature
≤
125°C.
2. 'A' is Amps of Rated SSPC Current.
3. Control Input must never be left floating.
4. An external 0.1μf ceramic capacitor from VBias to the +5V return ground is
recommended.
* I-MAX is the maximum continuous current.
** Specified for -55° to +105°C case temperature; Please increase by 0.6%/°C
between +105°C and +125°C Max Limit.
50 continuous
100 Volts, 50 ms
transient
50 continuous
-0.5 to VBias +0.5
-100 to +100
-0.5 to +7.0
-1000 to +1000
+300 (within 10 sec.)
+150
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
°C
°C
Power In to Power Out
Power Out to Slew Control
Control Input to Signal Ground
Power Out to Signal Ground
VBias Voltage (see note 4)
Pin-to-Case
Lead Temperature (soldering)
Junction Temperature
VALUE
UNIT
PARAMETER
TABLE 1. ABSOLUTE MAXIMUM RATINGS
Vdc
Vdc
Vdc
Vdc
see note 2
300 typ
30 min
pF/A
ms
Output Capacitance
Trip Reset Time
Unlimited
Unlimited
A
Rupture Capacity
Power In = 9 - 40 V
(see note 2 )
0.1 max
mA/
A
Power Input Leakage
Current to Power Out
Power In = 9 - 40 V
(see note 2 )
36 typ
μ
F/A
Max Load Capacitance
for Start-Up
at 100 Vdc
1000 typ
pF
Signal Ground to Power
Out Isolation
See TABLE 4
"On" Resistance
See TABLE 4
Power Dissipation
POWER CIRCUIT
Max. Continuous Current
-0.5 to 0.8
50 max
V
μ
A
μ
A
μ
A
Control Turn-Off Voltage
Control Input Current
control voltage = 5.0 V
control voltage = 2.4 V
control voltage = 0.8 V
V
CC
= 4.5V,
I
OL
= 2.5 mA
V
CC
= 4.5V,
I
OH
= -1.0mA
50 max
-50 min
Control Input Current
Control Input Current
0.4 max
see TABLE 5
Status Truth Table
2.0 to 5.5
V
Control Turn-On Voltage
VCC = 4.5 to 5.5 Vdc
30 typ
70 max
mA
VBias Supply Current
Note 3
TTL/CMOS
compatible
CONTROL CIRCUIT
Logic Type
CONDITIONS
VALUE
UNIT
PARAMETER
TABLE 3. RP-21000 SPECIFICATIONS
(SEE NOTES 1 AND 2)
see FIGURE 3
Response Time
TEMPERATURE RANGE
Operating (Case)
Storage
THERMAL RESISTANCE
Case to Sink (
θ
CS
)
Case to Ambient (
θ
CA
)
Temperature Rise,
Junction-to-Case
See FIGURE 4
65 max
g
PHYSICAL
CHARACTERISTICS
Size
Weight
-55 to +125
-55 to +150
°C
°C
Rated Load
0.5
12
10
°C/W
°C/W
°C
Pin-to-Case Voltage =
100Vdc
Power Ground to
Signal Ground
Voltage = 50Vdc
across pins 6&7, 9&10
see FIGURE 2
50 min
M
Isolation Resistance
Any Pin to Case
Isolation Resistance
Power Out to
Signal Ground
Voltage Drop
Trip Characteristics
50 min
M
0.25 max
Vdc
Power Out Voltage >
Power In Voltage
1.8 max
V
Output-to-Input Parasitic
Diode, Forward Voltage
at Continuous Current
Power Out Voltage >
Power In Voltage
Pulse Width
≤
100
μ
S
4.0 typ
5
0.95
0.03
RP-21005
10
2.6
0.023
RP-21010
15
3.6
0.015
RP-21015
20
5.0
0.012
RP-21020
25
7.7
0.012
RP-21025
2
0.6
0.1
RP-21002
I-MAX*
(AMPS)
POWER DISSIPATION
(WATTS)**
“ON”
RESISTANCE
(OHMS)**
PART
NUMBER
TABLE 4.
See TABLE 4
Output-to-Input Parasitic
Diode, Pulsed
Current Per Amp Of
Rated Current
V
UNIT
+9.0 to +40.0
+4.5 to VBias
-40 to +40
+4.5 to +5.5
VALUE
Power In to Power Out
Control Input to Signal Ground
Power Out to Signal Ground
VBias voltage (see note 4)
PARAMETER
TABLE 2. RECOMMENDED OPERATING
CONDITIONS
Status Output Voltage
Status Output Voltage
2.4 min
V
VALUE
CONDITIONS
UNIT
PARAMETER
POWER CIRCUIT
(continued)
Output-to-Input Parasitic
Diode, Continuous
Current Per Amp Of
Rated Current
TABLE 3. RP-21000 SPECIFICATIONS (CONTD)
A
Power Out Voltage >
Power In Voltage
1.0 typ
A
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