參數(shù)資料
型號: RLD03N06CLE
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs
中文描述: 60 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
文件頁數(shù): 2/13頁
文件大?。?/td> 188K
代理商: RLD03N06CLE
2
Specifications RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain-Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V
60
-
85
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A
1
-
2.5
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 45V,
V
GS
= 0V
T
J
= +25
o
C
-
-
50
μ
A
T
J
= +150
o
C
-
-
200
μ
A
Gate-Source Leakage Current
I
GSS
V
GS
= 5V
T
J
= +25
o
C
-
-
5
μ
A
T
J
= +150
o
C
-
-
20
μ
A
On Resistance
r
DS(ON)
I
D
= 0.100A,
V
GS
= 5V
T
J
= +25
o
C
-
-
6.0
T
J
= +150
o
C
-
-
12.0
Limiting Current
I
DS(LIMIT)
V
DS
= 15V,
V
GS
= 5V
T
J
= +25
o
C
280
-
420
mA
T
J
= +150
o
C
140
-
210
mA
Turn-On Time
t
ON
V
DD
= 30V, I
D
= 0.10A,
R
L
= 3
00
, V
GS
= 5V,
R
GS
= 25
-
-
7.5
μ
s
Turn-On Delay Time
t
D(ON)
-
-
2.5
μ
s
Rise Time
t
R
-
-
5.0
μ
s
Turn-Off Delay Time
t
D(OFF)
-
-
7.5
μ
s
Fall Time
t
F
-
-
5.0
μ
s
Turn-Off Time
t
OFF
-
-
12.5
μ
s
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
100
-
pF
Output Capacitance
C
OSS
-
65
-
pF
Reverse Transfer Capacitance
C
RSS
-
3.0
-
pF
Thermal Resistance Junction to Case
R
θ
JC
-
-
5.0
o
C/W
Thermal Resistance Junction to Ambient
R
θ
JA
TO-220 Package
-
-
80
o
C/W
TO-251 and TO-252 Packages
-
-
100
o
C/W
Source-Drain Diode Ratings and Specifications
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Forward Voltage
V
SD
I
SD
= 0.1A
-
-
1.5
V
Reverse Recovery Time
t
RR
I
SD
= 0.1A, dI
SD
/dt = 100A/
μ
s
-
-
1.0
ms
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