參數(shù)資料
型號(hào)： RHRU150100
廠商： HARRIS SEMICONDUCTOR
元件分類： 參考電壓二極管
英文描述： 150A, 900V - 1000V Hyperfast Diodes
中文描述： 150 A, 1000 V, SILICON, RECTIFIER DIODE
文件頁(yè)數(shù)： 2/3頁(yè)
文件大?。?/td> 39K
代理商： RHRU150100
2
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
SYMBOL
TEST CONDITION
LIMITS
UNITS
RHRU15090
RHRU150100
MIN
TYP
MAX
MIN
TYP
MAX
V
F
I
F
= 150A, T
C
= +25
o
C
I
F
= 150A, T
C
= +150
o
C
V
R
= 900V, T
C
= +25
o
C
V
R
= 1000V, T
C
= +25
o
C
V
R
= 900V, T
C
= +150
o
C
V
R
= 1000V, T
C
= +150
o
C
-
-
3.0
-
-
3.0
V
V
F
-
-
2.5
-
-
2.5
V
I
R
-
-
500
-
-
-
μ
A
-
-
-
-
-
500
μ
A
I
R
-
-
3.0
-
-
-
mA
-
-
-
-
-
3.0
mA
t
RR
I
F
= 1A, dI
F
/dt = 100A/
μ
s
-
-
90
-
-
90
ns
I
F
= 150A, dI
F
/dt = 100A/
μ
s
-
-
100
-
-
100
ns
t
A
I
F
= 150A, dI
F
/dt = 100A/
μ
s
-
65
-
-
65
-
ns
t
B
I
F
= 150A, dI
F
/dt = 100A/
μ
s
-
30
-
-
30
-
ns
R
θ
JC
-
-
0.4
-
-
0.4
o
C/W
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
μ
s, D = 2%).
I
R
= Instantaneous reverse current.
t
RR
= Reverse recovery time (See Figure 2), summation of t
A
+ t
B
.
t
A
= Time to reach peak reverse current (See Figure 2).
t
B
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 2).
R
θ
JC
= Thermal resistance junction to case.
E
AVL
= Controlled avalanche energy (See Figures 7 and 8).
pw = pulse width.
D = duty cycle.
FIGURE 1. t
RR
TEST CIRCUIT
FIGURE 2. t
RR
WAVEFORMS AND DEFINITIONS
C1
L
LOOP
DUT
Q
3
R
3
Q
4
Q
2
R
1
R
2
-V
4
Q
1
-V
2
0
0
+V
1
t
1
t
2
t
3
R
4
+V
3
V
1
AMPLITUDE CONTROLS I
F
V
2
AMPLITUDE CONTROLS dI
F
/dt
L
1
= SELF INDUCTANCE OF R
4
+L
LOOP
t
1
≥
5t
A(MAX)
t
2
> t
RR
t
3
> 0
L
1
R
4
t
A(MIN)
10
≤
I
F
t
RR
t
A
t
B
0
I
RM
0.25 I
RM
V
R
V
RM
dI
F
dt
RHRU15090, RHRU150100
相關(guān)PDF資料
PDF描述
RHRU15090 150A, 900V - 1000V Hyperfast Diodes
RHRU150120 150A, 1200V Hyperfast Diode
RHRU15060 150A, 600V Hyperfast Diode
RHRU50100 50A, 700V - 1000V Hyperfast Diodes
RHRU5070 50A, 700V - 1000V Hyperfast Diodes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RHRU150120 功能描述:二極管 - 通用，功率，開(kāi)關(guān) TO-218 RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube
RHRU15060 功能描述:二極管 - 通用，功率，開(kāi)關(guān) 150A 600V RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube
RHRU15090 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:150A, 900V - 1000V Hyperfast Diodes
RHRU50100 制造商:Rochester Electronics LLC 功能描述:- Bulk
RHRU50120 制造商:Rochester Electronics LLC 功能描述:- Bulk
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