參數(shù)資料
型號(hào)： RHRP660CC
廠商： HARRIS SEMICONDUCTOR
元件分類： 參考電壓二極管
英文描述： 6A, 600V Ultrafast Dual Diodes(6A, 600V 超快雙二極管)
中文描述： 6 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB
封裝： TO-220AB, 3 PIN
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 82K
代理商： RHRP660CC
2
Absolute Maximum Ratings
(Per Leg)
T
C
= 25
o
C, Unless Otherwise Specified
RHRP640CC
400
400
400
6
RHRP650CC
500
500
500
6
RHRP660CC
600
600
600
6
UNITS
V
V
V
A
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . .I
F(AV)
T
C
= 152
o
C
Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
Square Wave, 20kHz
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
Halfwave, 1 phase, 60Hz
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Avalanche Energy (See Figures 10 and 11). . . . . . . . . . . . . . . . . . . . . E
AVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .T
STG
,T
J
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
12
12
12
A
60
60
60
A
50
10
50
10
50
10
W
mJ
o
C
-65 to 175
-65 to 175
-65 to 175
300
260
300
260
300
260
o
C
o
C
Electrical Specifications
(Per Leg)
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
TEST CONDITION
RHRP640CC
RHRP650CC
RHRP660CC
UNITS
MIN
TYP
MAX
MIN
TYP
MAX
MIN
TYP
MAX
V
F
I
F
= 6A
I
F
= 6A, T
C
= 150
o
C
-
-
2.1
-
-
2.1
-
-
2.1
V
-
-
1.7
-
-
1.7
-
-
1.7
V
I
R
V
R
= 400V
-
-
100
-
-
-
-
-
-
μ
A
V
R
= 500V
-
-
-
-
-
100
-
-
-
μ
A
V
R
= 600V
V
R
= 400V, T
C
= 150
o
C
V
R
= 500V, T
C
= 150
o
C
V
R
= 600V, T
C
= 150
o
C
-
-
-
-
-
-
-
-
100
μ
A
-
-
500
-
-
-
-
-
-
μ
A
-
-
-
-
-
500
-
-
-
μ
A
-
-
-
-
-
-
-
-
500
μ
A
t
rr
I
F
= 1A, dI
F
/dt = 200A/
μ
s
-
-
30
-
-
30
-
-
30
ns
I
F
= 6A, dI
F
/dt = 200A/
μ
s
-
-
35
-
-
35
-
-
35
ns
t
a
I
F
= 6A, dI
F
/dt = 200A/
μ
s
-
16
-
-
16
-
-
16
-
ns
t
b
I
F
= 6A, dI
F
/dt = 200A/
μ
s
-
8.5
-
-
8.5
-
-
8.5
-
ns
Q
RR
I
F
= 6A, dI
F
/dt = 200A/
μ
s
-
45
-
-
45
-
-
45
-
nC
C
J
V
R
= 10V, I
F
= 0A
-
20
-
-
20
-
-
20
-
pF
R
θ
JC
-
-
3
-
-
3
-
-
3
o
C/W
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
μ
s, D = 2%).
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time (See Figure 9), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current (See Figure 9).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 9).
Q
RR
= Reverse recovery charge.
C
J
= Junction Capacitance.
R
θ
JC
= Thermal resistance junction to case.
pw = pulse width.
D = duty cycle.
RHRP640CC, RHRP650CC, RHRP660CC
相關(guān)PDF資料
PDF描述
RHRP640CC 6A, 400V - 600V Hyperfast Dual Diodes
RHRP650CC 6A, 400V - 600V Hyperfast Dual Diodes
RHRP8100 8A, 1000V Hyperfast Diode
RHRP8100CC 8A, 1000V Hyperfast Dual Diode
RHRP8120 8A, 1200V Hyperfast Diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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