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參數(shù)資料
| 型號： | RHRP6120CC |
| 廠商： | INTERSIL CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 6A, 1200V Hyperfast Dual Diode(6A, 1200V 超快雙二極管) |
| 中文描述： | 6 A, 1200 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 97K |
| 代理商： | RHRP6120CC |
2
Absolute Maximum Ratings
(Per Leg)
T
C
= +25
o
C, Unless Otherwise Specified
RHRP6120CC
1200
1200
1200
6
UNITS
V
V
V
A
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
F(AV)
T
C
= 130
o
C
Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
Square Wave, 20kHz
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
Halfwave, 1 Phase, 60Hz
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Avalanche Energy (See Figures 10 and 11). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
,T
J
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
12
A
60
A
50
10
W
mJ
o
C
-65 to +175
Electrical Specifications
(Per Leg)
T
C
= +25
o
C, Unless Otherwise Specified
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNITS
V
F
I
F
= 6A, T
C
= +25
o
C
-
-
3.2
V
I
F
= 6A, T
C
= +150
o
C
-
-
2.6
V
I
R
V
R
= 1200V, T
C
= +25
o
C
-
-
100
μ
A
V
R
= 1200V, T
C
= +150
o
C
-
-
500
μ
A
t
RR
I
F
= 1A, dI
F
/dt = 200A/
μ
s
-
-
55
ns
I
F
= 6A, dI
F
/dt = 200A/
μ
s
-
-
65
ns
t
A
I
F
= 6A, dI
F
/dt = 200A/
μ
s
-
33
-
ns
t
B
I
F
= 6A, dI
F
/dt = 200A/
μ
s
-
22
-
ns
Q
RR
I
F
= 6A, dI
F
/dt = 200A/
μ
s
-
210
-
nC
C
J
V
R
= 10V, I
F
= 0A
-
22
-
pF
R
θ
JC
-
-
3
o
C/W
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
μ
s, D = 2%).
I
R
= Instantaneous reverse current.
t
RR
= Reverse recovery time (See Figure 9), summation of t
A
+ t
B
.
t
A
= Time to reach peak reverse current (See Figure 9).
t
B
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 9).
Q
RR
= Reverse recovery charge.
C
J
= Junction Capacitance.
R
JC
= Thermal resistance junction to case.
E
AVL
= Controlled Avalanche Energy (See Figures 10 and 11).
pw = pulse width.
D = duty cycle.
RHRP6120CC
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| RHRP640CC | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:6A, 400V - 600V Hyperfast Dual Diodes |
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| RHRP8100 | 功能描述:二極管 - 通用，功率，開關(guān) 8A 1000V RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
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