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RHRG7570, RHRG7580, RHRG7590, RHRG75100
75A, 700V - 1000V Hyperfast Diodes
RHRG7570, RHRG7580, RHRG7590 and RHRG75100
(TA49068) are hyperfast diodes with soft recovery character-
istics (t
RR
< 85ns). They have half the recovery time of
ultrafast diodes and are silicon nitride passivated ion-
implanted epitaxial planar construction.
These devices are intended for use as freewheeling/clamping
diodes and rectifiers in a variety of switching power supplies
and other power switching applications. Their low stored
charge and hyperfast soft recovery minimize ringing and elec-
trical noise in many power switching circuits reducing power
loss in the switching transistors.
Ordering Information
Features
Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<85ns
Operating Temperature . . . . . . . . . . . . . . . . . . . +175
o
C
Reverse Voltage Up To. . . . . . . . . . . . . . . . . . . . . .1000V
Avalanche Energy Rated
Planar Construction
Applications
Switching Power Supplies
Power Switching Circuits
General Purpose
Package
JEDEC STYLE TO-247
Symbol
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
RHRG7570
TO-247
RHRG7570
RHRG7580
TO-247
RHRG7580
RHRG7590
TO-247
RHRG7590
RHRG75100
TO-247
RHRG75100
NOTE: When ordering, use the entire part number.
(BOTTOM
SIDE METAL)
ANODE
CATHODE
CATHODE
K
A
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
RHRG7570
700
700
700
75
RHRG7580
800
800
800
75
RHRG7590
900
900
900
75
RHRG75100
1000
1000
1000
75
UNITS
V
V
V
A
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . .V
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . V
RWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . I
F(AV)
(T
C
= +52
o
C)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . .I
FSM
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . .I
FSM
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Avalanche Energy (L = 40mH) (See Figures 10 and 11). . . . E
AVL
Operating and Storage Temperature. . . . . . . . . . . . . . . . T
STG
, T
J
150
150
150
150
A
750
750
750
750
A
190
50
190
50
190
50
190
50
W
mj
o
C
-65 to +175
-65 to +175
-65 to +175
-65 to +175
Data Sheet
April 1995
File Number
3923.1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 1999