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參數(shù)資料
| 型號(hào)： | RFP45N02L |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 45A, 20V, 0.022 Ohm, N-Channel Logic Level Power MOSFETs |
| 中文描述： | 45 A, 20 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 78K |
| 代理商： | RFP45N02L |
4
RFP45N02L, RF1S45N02L, RF1S45N02LSM
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs
GATE VOLTAGE AND DRAIN CURRENT
FIGURE 10. SWITCHING TIME AS A FUNCTION OF GATE
RESISTANCE
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
0.01
0.1
10
10
0.001
200
1
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
-V
DD
) +1]
If R = 0
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
100
1
100
0
25
0
1
2
3
5
50
75
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 4V
V
GS
= 10V
100
4
V
GS
= 3V
V
GS
= 5V
V
GS
= 4.5V
V
GS
= 3.5V
PULSE DURATION = 250
μ
s, T
C
= 25
o
C
0
3.0
4.5
6.0
7.5
1.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
25
50
75
175
o
C
PULSE TEST
PULSE DURATION = 250
μ
s
DUTY CYCLE = 0.5% MAX
I
D
,
100
-55
o
C
25
o
C
V
DD
= 15V
0
25
50
75
3.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
3.5
4.0
4.5
r
D
,
5.0
100
I
D
= 2A
I
D
= 30A
I
D
= 15A
I
D
= 45A
2.5
PULSE DURATION = 250
μ
s
O
)
0
150
200
250
300
0
10
20
30
40
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
50
350
100
50
t
r
t
f
t
d(OFF)
t
d(ON)
V
DD
= 15V, I
D
= 45A, R
L
= 0.333
0
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
200
PULSE DURATION = 250
μ
s, V
GS
= 5V, I
D
= 45A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RF1S45N02L | 45A, 20V, 0.022 Ohm, N-Channel Logic Level Power MOSFETs |
| RF1S45N02LSM | 45A, 20V, 0.022 Ohm, N-Channel Logic Level Power MOSFETs |
| RFP45N03L | 45A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs |
| RF1S45N03L | 45A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs |
| RF1S45N03LSM | 45A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFP45N03L | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFP45N06 | 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFP45N06_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| RFP45N06_Q | 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFP45N06LE | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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