參數(shù)資料
型號(hào): RFP45N02L
廠商: HARRIS SEMICONDUCTOR
元件分類(lèi): JFETs
英文描述: 45A, 20V, 0.022 Ohm, N-Channel Logic Level Power MOSFETs
中文描述: 45 A, 20 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù): 4/8頁(yè)
文件大?。?/td> 78K
代理商: RFP45N02L
4
RFP45N02L, RF1S45N02L, RF1S45N02LSM
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs
GATE VOLTAGE AND DRAIN CURRENT
FIGURE 10. SWITCHING TIME AS A FUNCTION OF GATE
RESISTANCE
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
0.01
0.1
10
10
0.001
200
1
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
-V
DD
) +1]
If R = 0
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
100
1
100
0
25
0
1
2
3
5
50
75
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 4V
V
GS
= 10V
100
4
V
GS
= 3V
V
GS
= 5V
V
GS
= 4.5V
V
GS
= 3.5V
PULSE DURATION = 250
μ
s, T
C
= 25
o
C
0
3.0
4.5
6.0
7.5
1.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
25
50
75
175
o
C
PULSE TEST
PULSE DURATION = 250
μ
s
DUTY CYCLE = 0.5% MAX
I
D
,
100
-55
o
C
25
o
C
V
DD
= 15V
0
25
50
75
3.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
3.5
4.0
4.5
r
D
,
5.0
100
I
D
= 2A
I
D
= 30A
I
D
= 15A
I
D
= 45A
2.5
PULSE DURATION = 250
μ
s
O
)
0
150
200
250
300
0
10
20
30
40
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
50
350
100
50
t
r
t
f
t
d(OFF)
t
d(ON)
V
DD
= 15V, I
D
= 45A, R
L
= 0.333
0
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
200
PULSE DURATION = 250
μ
s, V
GS
= 5V, I
D
= 45A
相關(guān)PDF資料
PDF描述
RF1S45N02L 45A, 20V, 0.022 Ohm, N-Channel Logic Level Power MOSFETs
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