參數(shù)資料
型號(hào)： RFP25N05
廠商： Electronic Theatre Controls, Inc.
英文描述： POWER MOS FIELD EFFECT TRANSISTORS
中文描述： 功率MOS場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 104K
代理商： RFP25N05
4-505
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFP25N05
50
50
±
20
25
UNITS
V
V
V
A
A
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Refer to Peak Current Curve
Refer to UIS Curve
72
0.48
-55 to 175
W
W/
o
C
o
C
300
260
o
C
o
C
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 11)
50
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250mA (Figure 10)
2
-
4
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
,T
C
= 150
o
C
V
GS
=
±
20V
-
-
1
μ
A
-
-
25
μ
A
Gate to Source Leakage Current
I
GSS
-
-
±
100
nA
Drain to Source On Resistance
r
DS(ON)
I
D
= 25A, V
GS
= 10V (Figure 9)
V
DD
= 25V, I
D
≈
12.5A, R
L
= 2.0
,
V
GS
= 10V, R
G
= 10
(Figure 13)
-
-
0.047
Turn-On Time
t
ON
-
-
60
ns
Turn-On Delay Time
t
d(ON)
-
14
-
ns
Rise Time
t
r
-
30
-
ns
Turn-Off Delay Time
t
d(OFF)
-
45
-
ns
Fall Time
t
f
-
22
-
ns
Turn-Off Time
t
OFF
-
-
100
ns
Total Gate Charge
Q
G(TOT)
V
GS
= 0V to 20V
V
DD
= 40V,
I
D
= 25A, R
L
= 1.6
I
g(REF)
= 0.75mA
(Figure 13)
-
-
80
nC
Gate Charge at 10V
Q
G(10)
V
GS
= 0V to 10V
-
-
45
nC
Threshold Gate Charge
Q
G(TH)
V
GS
= 0V to 2V
-
-
3
nC
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 12)
-
1075
-
pF
Output Capacitance
C
OSS
-
350
-
pF
Reverse Transfer Capacitance
C
RSS
-
100
-
pF
Thermal Resistance Junction to Case
R
θ
JC
R
θ
JA
(Figure 3)
-
-
2.083
o
C/W
Thermal Resistance Junction to Ambient
-
-
80
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= 25A
I
SD
= 25A, dI
SD
/dt = 100A/
μ
s
-
-
1.5
V
Reverse Recovery Time
t
RR
-
-
125
ns
NOTES:
2. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
RFP25N05
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RFP25N05L 制造商:Harris Corporation 功能描述:
RFP25N06 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs
RFP25N06L 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
RFP2N08 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
RFP2N08L 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs
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