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參數(shù)資料
| 型號： | RFP15P06 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs |
| 中文描述： | 15 A, 60 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 36K |
| 代理商： | RFP15P06 |
4
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer toIntersil Application Notes AN7254 and AN7260.
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
I
D
= 15A
PULSE DURATION = 80
μ
s
V
GS
= 10V
-50
0
50
100
150
200
T
J
, JUNCTION TEMPERATURE (
o
C)
2.0
1.5
1.0
0.5
0
r
D
,
O
-50
0
50
100
150
200
T
J
, JUNCTION TEMPERATURE (
o
C)
1
0.8
0.6
1.2
1.4
N
T
V
GS
= V
DS
I
D
= 250
μ
A
0
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
20
30
40
50
1600
1400
1200
1000
800
600
400
200
0
C
C
RSS
C
OSS
C
ISS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
150
112.5
75
37.5
0
10
8
6
4
2
0
V
DD
= BV
DSS
V
DD
= BV
DSS
GATE
SOURCE
VOLTAGE
DRAIN SOURCE VOLTAGE
I
G(REF)
I
G(ACT)
20
I
G(REF)
I
G(ACT)
80
t, TIME (
μ
s)
V
G
,
V
D
,
0.75BV
DSS
0.50BV
DSS
0.25BV
DSS
R
L
= 10
I
G(REF)
= 1mA
V
GS
= 10V
Test Circuits and Waveforms
FIGURE 11. SWITCHING TIME TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
V
GS
R
L
R
G
DUT
+
-
V
DD
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
RFP15N15
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