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參數(shù)資料
| 型號(hào)： | RFP15N08L |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 15A, 80V, 0.140 Ohm, Logic Level,N-Channel Power MOSFET(15A, 60V, 0.140 Ω, N溝道,邏輯電平,功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 15 A, 80 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 40K |
| 代理商： | RFP15N08L |
6-236
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. FORWARD BIAS SAFE OPERATING AREA
FIGURE 3. SATURATION CHARACTERISTICS
FIGURE 4. TRANSFER CHARACTERISTICS
FIGURE 5. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
FIGURE 6. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
P
0.2
0.4
0.6
0.8
1.0
1.2
1
10
100
1000
V
DS
, DRAIN SOURCE VOLTAGE (V)
100
10
1
0
I
D
,
OPERATION IN
THIS AREA IS
LIMITED BY r
DS(ON)
I
D
MAX CONTINUOUS
DCOPERATON
CURVES MUST BE
DERATED LINEARLY
WITH INCREASE IN
TEMPERATURE
T
C
= 25
o
C
V
GS
= 10V
0
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2
3
4
5
40
30
20
10
0
I
D
,
PULSE DURATION = 80
μ
s
DUTY CYCLE
≤
0.5% MAX
T
C
= 25
C
V
GS
= 7.5V
V
GS
= 3.5V
V
GS
= 3V
V
GS
= 5V
V
GS
= 4.5V
V
GS
= 4V
V
GS
= 2V
V
GS
= 2.5V
0
1
2
3
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
16
14
12
10
8
6
4
2
0
I
D
,
-40
o
C
125
o
C
25
o
C
V
DS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE
≤
0.5% MAX
125
o
C
-40
o
C
0
2
4
6
8
10
12
14
16
I
D
, DRAIN TO SOURCE CURRENT (A)
0
r
D
,
O
)
V
GS
= 5V
PULSE DURATION = 80
μ
s
DUTY CYCLE
≤
0.5% MAX
0.3
0.2
0.1
T
C
= 125
o
C
25
o
C
-40
o
C
V
GS
= 10V, I
D
= 15A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
2.0
1.5
1
0.5
050
0
T
J
, JUNCTION TEMPERATURE (
o
C)
50
100
150
200
N
O
RFP15N08L
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RFP15N15 | 15A, 150V, 0.150 Ohm, N-Channel Power MOSFETs |
| RFP15P05 | 15A, 50V, 0.150 Ohm, P-Channel Power MOSFETs |
| RFP15P06 | 15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs |
| RFP15N05 | 15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs |
| RFP15N05 | 15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFP15N12 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RFP15N15 | 制造商:Harris Corporation 功能描述: |
| RFP15P05 | 功能描述:MOSFET TO-251AA P-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFP15P06 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs |
| RFP17N06L | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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