參數(shù)資料
型號(hào)： RFP15N05L
廠商： INTERSIL CORP
元件分類： JFETs
英文描述： 15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs(15A, 50V and 60V, 0.140 Ω,邏輯電平N溝道功率MOS場(chǎng)效應(yīng)管)
中文描述： 15 A, 50 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 40K
代理商： RFP15N05L
6-230
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFP15N05L
50
50
15
40
±
10
60
0.48
-55 to 150
RFP15N06L
60
60
15
40
±
10
60
0.48
-55 to 150
UNITS
V
V
A
A
V
W
W/
o
C
o
C
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Above T
C
= 25
o
C, Derate Linearly. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J,
T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V
RFP15N05L
50
-
-
V
RFP15N06L
60
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 7)
1
-
2
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 48V, V
DS
= 50V
-
-
1
μ
A
V
DS
= 48V, V
DS
= 50V
TC = 125
o
C
-
-
50
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
10V, V
DS
= 0V
-
-
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 15A, V
GS
= 5V (Figures 5, 6)
-
-
0.140
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V, f = 1MHz
(Figure 8)
-
-
900
pF
Output Capacitance
C
OSS
-
-
450
pF
Reverse-Transfer Capacitance
C
RSS
-
-
200
pF
Turn-On Delay Time
t
d(ON)
V
DD
= 30V, I
D
= 7.5A, R
G
= 6.25
(Figures 10, 11)
-
16
40
ns
Rise Time
t
r
-
250
325
ns
Turn-Off Delay Time
t
d(OFF)
-
200
325
ns
Fall Time
t
f
V
GS
= 5V
-
225
325
ns
R
θ
JC
RFP15N05L, RFP15N06L
-
-
2.083
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= 7.5A
-
-
1.4
V
Diode Reverse Recovery Time
t
rr
I
SD
= 4A, dI
SD
/dt = 100A/
μ
s
-
225
-
ns
NOTE:
2. Pulsed: pulse duration =
≤
300
μ
s maximum, duty cycle =
≤
2%.
3. Repititive rating: pulse width limited by maximum junction temperature.
RFP15N05L, RFP15N06L
相關(guān)PDF資料
PDF描述
RFP15N06L 15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs(15A, 50V and 60V, 0.140 Ω,邏輯電平N溝道功率MOS場(chǎng)效應(yīng)管)
RFP15N08L 15A, 80V, 0.140 Ohm, Logic Level,N-Channel Power MOSFET(15A, 60V, 0.140 Ω, N溝道,邏輯電平,功率MOS場(chǎng)效應(yīng)管)
RFP15N15 15A, 150V, 0.150 Ohm, N-Channel Power MOSFETs
RFP15P05 15A, 50V, 0.150 Ohm, P-Channel Power MOSFETs
RFP15P06 15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RFP15N05L 制造商:Intersil Corporation 功能描述:MOSFET N LOGIC TO-220
RFP15N05L_NL 制造商:Fairchild Semiconductor Corporation 功能描述:
RFP15N05L_Q 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFP15N05L119 制造商:Harris Corporation 功能描述:
RFP15N06 制造商:Rochester Electronics LLC 功能描述:- Bulk
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