- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374588 > RFP12N18 (HARRIS SEMICONDUCTOR) 12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs PDF資料下載
參數(shù)資料
| 型號： | RFP12N18 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 12 A, 180 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 43K |
| 代理商： | RFP12N18 |
3
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs
CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs
DRAIN CURRENT
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
P
0.2
0.4
0.6
0.8
1.0
1.2
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
14
12
10
8
6
4
2
0
RFP12N08, RFP12N10
RFM12N08, RFM12N10
T
C
= 25
o
C
1
10
100
1000
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
10
1
0
I
D
,
I
D
(MAX)
CONTINUOUS
DCOPERATON
V
DSS
(MAX) 80V
RFM12N08, RFP12N08
V
DSS
(MAX) 100V
RFM12N10, RFP12N10
OPERATION IN
THIS AREA MAY BE
LIMITED BY r
DS(ON)
0
2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
4
6
8
10
16
12
8
4
0
I
D
,
PULSE DURATION = 80
μ
s
DUTY CYCLE
≤
2%
T
C
= 25
o
C
V
GS
= 10V
V
GS
= 20V
V
GS
= 9V
V
GS
= 8V
V
GS
= 7V
V
GS
= 6V
V
GS
= 5V
2
4
6
8
10
12
16
12
8
4
0
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
V
DS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE
≤
2%
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= -40
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= -40
o
C
0
4
8
12
16
20
I
D
, DRAIN CURRENT (A)
0.8
0
0.6
0.4
0.2
r
D
,
O
)
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE
≤
2%
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= -40
o
C
RFM12N08, RFM12N10, RFP12N08, RFP12N10
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RFP12N20 | 12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs |
| RFP12N06 | 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| RFP12N06RLE | 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| RFP12N10L | 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET(12A, 100V, 0.200 Ω,邏輯電平N溝道功率MOS場效應(yīng)管) |
| RFP12N10L | 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFP12N20 | 制造商:Harris Corporation 功能描述: |
| RFP12P08 | 功能描述:MOSFET TO-220 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFP12P10 | 功能描述:MOSFET TO-220 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFP14N05 | 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFP14N05L | 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。