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參數(shù)資料
| 型號： | RFP12N08 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 12 A, 80 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 43K |
| 代理商： | RFP12N08 |
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFM12N08
80
80
12
30
±
20
75
0.6
-55 to 150
RFM12N10
100
100
12
30
±
20
75
0.6
-55 to 150
RFP12N08
80
80
12
30
±
20
60
0.48
-55 to 150
RFP12N10
100
100
12
30
±
20
60
0.48
-55 to 150
UNITS
V
V
A
A
V
W
W/
o
C
o
C
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1). . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . .T
J,
T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
300
260
300
260
300
260
300
260
o
C
o
C
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
RFM12N08, RFP12N08
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V
80
-
-
V
RFM12N10, EFP12N10
100
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 8)
2
-
4
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS,
V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS,
T
C
= 125
o
C
-
-
1
μ
A
-
-
25
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V, V
DS
= 0V
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 12A, V
GS
= 10V (Figures 6, 7)
-
-
0.200
Drain to Source On Voltage (Note 2)
V
DS(ON)
I
D
= 12A, V
GS
= 10V
-
-
2.4
V
Turn-On Delay Time
t
d(ON)
V
DD
= 50V, I
D
= 6A, R
G
= 50
,
V
GS
= 10V, R
L
= 8
,
(Figures 10, 11, 12)
-
45
70
ns
Rise Time
t
r
-
250
375
ns
Turn-Off Delay Time
t
d(OFF)
-
85
130
ns
Fall Time
t
f
-
100
150
ns
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V, f = 1MHz
(Figure 9)
-
-
850
pF
Output Capacitance
C
OSS
-
-
300
pF
Reverse Transfer Capacitance
C
RSS
-
-
150
pF
Thermal Resistance Junction to Case
R
θ
JC
RFM12N08, RFM12N10
-
-
1.67
o
C/W
RFP12N08, RFP12N10
-
-
2.083
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Voltage (Note 2)
V
SD
I
SD
= 6A
-
-
1.4
V
Reverse Recovery Time
t
rr
I
SD
= 4A, dI
SD
/dt = 100A/
μ
s
-
150
-
ns
NOTE:
2. Pulse test: Pulse width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
RFM12N08, RFM12N10, RFP12N08, RFP12N10
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| RFP12N08L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 12A I(D) | TO-220AB |
| RFP12N10 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFP12N1093 | 制造商:Harris Corporation 功能描述: |
| RFP12N10L | 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFP12N10L | 制造商:Intersil Corporation 功能描述:MOSFET N LOGIC TO-220 |
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