參數(shù)資料
型號： RFD10P03LSM
廠商： INTERSIL CORP
元件分類： JFETs
英文描述： 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET(10A, 30V, 0.200 Ω,P溝道功率MOS場效應(yīng)管)
中文描述： 10 A, 30 V, 0.22 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
文件頁數(shù)： 7/8頁
文件大?。?/td> 133K
代理商： RFD10P03LSM
7-9
PSpice Electrical Model
.SUBCKT RFD10P03L 2 1 3 REV 22 Aug 96
CA 12 8 1.29e-9
CB 15 14 9.90e-10
CIN 6 8 1.01e-9
DBODY 5 7 DBODYMOD
DBREAK 7 11 DBREAKMOD
DPLCAP 10 6 DPLCAPMOD
EBREAK 5 11 17 18 -36.49
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 5 10 8 6 1
EVTHRES 6 21 19 8 1
EVTEMP 6 20 18 22 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 3.40e-9
LSOURCE 3 7 3.22e-9
MMED 16 6 8 8 MmedMOD
MSTRO 16 6 8 8 MstroMOD
MWEAK 16 21 8 8 MweakMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 68.25e-3
RGATE 9 20 2.54
RSCL1 5 51 RSCLMOD 1e-6
RSCL2 5 50 1e3
RSOURCE 8 7 RSourceMOD 25.00e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESCL 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*33),5.0))}
.MODEL DBODYMOD D (IS=9.15e-13 RS=3.25e-2 IKF=0.05 N=0.97 TRS1=4.11e-5 TRS2=2.03e-6 CJO=1.13e-9 M=0.40 TT=3.72e-8)
.MODEL DBREAKMOD D ( RS=2.62e-1 TRS1=1.74e-3 TRS2=-3.81e-6)
.MODEL DPLCAPMOD D (CJO=1.46e-10 IS=1e-30 N=10 M=0.50)
.MODEL MSTRONGMOD PMOS (VTO=-1.95 KP=11.60 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL MMEDMOD PMOS (VTO=-1.65 KP=1.00 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=2.54)
.MODEL MWEAKMOD PMOS (VTO=-1.43 KP=0.09 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=25.4 RS=0.1)
.MODEL RBREAKMOD RES (TC1=9.17e-4 TC2=-2.74e-7)
.MODEL RDRAINMOD RES (TC1=6.35e-3 TC2=1.98e-5)
.MODEL RSOURCEMOD RES (TC1=0 TC2=0)
.MODEL RSCLMOD RES (TC1=2e-3 TC2=0)
.MODEL RVTHRESMOD RES (TC1=1.23e-3 TC2=1.97e-6)
.MODEL RVTEMPMOD RES (TC1=-1.18e-3 TC2=1.44e-6)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=4.80 VOFF=1.80)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=1.80 VOFF=4.80)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-0.40 VOFF=-3.40)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.40 VOFF=-0.40)
ENDS
For further discussion of the PSPICE model consult A New PSPICE Sub-circuit for the Power MOSFet Featuring Global Temperature Options; authored by
William J. Hepp and C. Frank Wheatley.
18
22
-
+
+
-
5
51
+
-
19
8
+
-
17
18
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
VBAT
RVTHRES
IT
17
18
19
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ESLC
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
8
6
LGATE
RLGATE
20
+
-
+
-
EBREAK
6
RFD10P03L, RFD10P03LSM, RFP10P03L
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PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RFD10P03LSM9A 制造商:HARRIS 制造商全稱:HARRIS 功能描述:10A, 30V, 0.200 ohm, Logic Level P-Channel Power MOSFET
RFD12N06RLE 功能描述:MOSFET 60V/12a/0.135Ohm NCh Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFD12N06RLE 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO 制造商:Intersil Corporation 功能描述:MOSFET N LOGIC I-PAK
RFD12N06RLESM 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D-PAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N, D-PAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:60V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:49W ;RoHS Compliant: Yes
RFD12N06RLESM9A 功能描述:MOSFET 60V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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