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參數(shù)資料
| 型號： | RF2163PCBA |
| 廠商： | RF Micro Devices, Inc. |
| 英文描述： | CAP 33UF 350V ELECT EB SMD |
| 中文描述： | 3V的，2.5GHz的線性功率放大器 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 96K |
| 代理商： | RF2163PCBA |
Preliminary
2-251
RF2163
Rev A2 001221
2
P
Pin
1
Function
GND
Description
Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane.
RF input. This input is AC coupled, so an external blocking capacitor is
not required if this pin is connected to a DC path.
Ground for second stage bias circuit. For best performance, keep
traces physically short and connect immediately to ground plane.
The PWR SEN and PWR REF pins can be used in conjunction with an
external feedback path to provide an RF power control function for the
RF2163. The power control function is based on sampling the RF drive
to the final stage of the RF2163.
Same as pin 4.
Interface Schematic
2
RF IN
See pin 14.
3
BIAS GND2
4
PWR SEN
5
6
PWR REF
VREG1
This pin requires a regulated supply to maintain the correct bias cur-
rent.
Same as pin 6.
7
8
VREG2
BIAS GND1
Ground for first stage bias circuit. For best performance connect to
ground with a 10nH inductor.
Same as pin 1.
9
GND
RF OUT
10
RF output and bias for the output stage. The power supply for the out-
put transistor needs to be supplied to this pin. This can be done
through a quarter-wave length microstrip line that is RF grounded at the
other end, or through an RF inductor that supports the required DC cur-
rents.
Same as pin 10.
11
12
13
14
RF OUT
RF OUT
NC
VCC1
See pin 10.
Same as pin 10.
See pin 10.
Not connected.
Power supply pin for the bias circuits. External low frequency bypass
capacitors should be connected if no other low frequency decoupling is
nearby.
15
16
Pkg
Base
VCC1
VCC
GND
Same as pin 14.
See pin 14.
Same as pin 14.
See pin 14.
Ground connection. The backside of the package should be connected
to the ground plane through a short path, i.e., vias under the device
may be required.
See pin 1 and 2.
RF OUT
RF IN
BIAS
VCC
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