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參數(shù)資料
| 型號(hào)： | RF1S25N06SM9A |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 25A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 60V的五（巴西）直|第25A條（?。﹟對263AB |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 418K |
| 代理商： | RF1S25N06SM9A |
2002 Fairchild Semiconductor Corporation
RFP25N06, RF1S25N06, RF1S25N06SM Rev. C
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
5
0
25
50
75
100
125
150
20
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
175
25
30
15
10
t
1
, RECTANGULAR PULSE DURATION (s)
10
-3
10
-2
10
-1
10
0
0.01
0.1
1
10
-5
10
1
NOTES:
DUTY FACTOR: D = t
1
/t
PEAK T
J
= P
DM
x Z
θ
J
C
x R
θ
J
C
+ T
C
P
DM
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
0.5
10
-4
T
Z
θ
J
,
2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
100
1
100
10
1
I
D
,
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
100
μ
s
1ms
10ms
DC
100ms
T
C
= 25
o
C
T
J
= MAX RATED
SINGLE PULSE
200
t, PULSE WIDTH (s)
1010
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
100
I
D
,
200
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
V
GS
= 20V
FOR TEMPERATURES ABOVE 25
o
C
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
I
I25
175
-------150
–
=
V
GS
= 10V
T
C
= 25
o
C
RFP25N06, RF1S25N06, RF1S25N06SM
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