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參數(shù)資料
| 型號： | REF198GBC |
| 廠商： | ANALOG DEVICES INC |
| 元件分類： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | Precision Micropower, Low Dropout, Voltage References |
| 中文描述： | 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 4.096 V, UUC6 |
| 封裝： | 0.041 X 0.057 INCH, DIE-6 |
| 文件頁數(shù)： | 5/23頁 |
| 文件大?。?/td> | 238K |
| 代理商： | REF198GBC |
REF192–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Condition
Min
Typ
Max
Units
TEMPERATURE COEFFICIENT
1, 2
“E” Grade
“F” Grade
“G” Grade
3
TCV
O
/
°
C
I
OUT
= 0 mA
2
5
10
ppm/
°
C
ppm/
°
C
ppm/
°
C
LINE REGULATION
4
“E” Grade
“F & G” Grades
V
O
/
V
IN
3.0 V
≤
V
S
≤
15 V, I
OUT
= 0 mA
10
20
ppm/V
ppm/V
LOAD REGULATION
4
“E” Grade
“F & G” Grades
V
O
/
V
LOAD
V
S
= 5.0 V, 0
≤
I
OUT
≤
20 mA
10
20
ppm/mA
ppm/mA
DROPOUT VOLTAGE
V
S
– V
O
V
S
= 3.5 V, I
LOAD
= 10 mA
V
S
= 4.0 V, I
LOAD
= 20 mA
1.00
1.50
V
V
NOTES
1
For proper operation, a 1
μ
F capacitor is required between the output pin and the GND pin of the device.
2
TCV
O
is defined as the ratio of output change with temperature variation to the specified temperature range expressed in ppm/
°
C.
TCV
= (
V max–V min
)/V
O
(
T
MAX
–T
MIN
).
3
Guaranteed by characterization.
4
Line and load regulation specifications include the effect of self-heating.
Specifications subject to change without notice.
REF193–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
(@ V
S
= 3.3 V, T
A
= +25
8
C unless otherwise noted)
REF19x Series
–5–
REV. D
(@ V
S
= 3.3 V, –40
8
C
≤
T
A
≤
+125
8
C unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Units
INITIAL ACCURACY
1
“G” Grade
LINE REGULATION
2
“G” Grades
LOAD REGULATION
2
“G” Grade
V
O
I
OUT
= 0 mA
2.990
3.0
3.010
V
V
O
/
V
IN
3.3 V,
≤
V
S
≤
15 V, I
OUT
= 0 mA
4
8
ppm/V
V
O
/
V
LOAD
V
S
– V
O
V
S
= 5.0 V, 0
≤
I
OUT
≤
30 mA
V
S
= 3.8 V, I
LOAD
= 10 mA
V
S
= 4.0 V, I
LOAD
= 30 mA
1000 Hours @ +125
°
C
6
15
ppm/mA
DROPOUT VOLTAGE
0.80
1.00
V
V
LONG-TERM STABILITY
3
V
O
e
N
1.2
mV
μ
V p-p
NOISE VOLTAGE
0.1 Hz to 10 Hz
30
NOTES
1
Initial accuracy includes temperature hysteresis effect.
2
Line and load regulation specifications include the effect of self-heating.
3
Long-term drift is guaranteed by 1000 hours life test performed on three independent wafer lots at +125
°
C, with an LTPD of 1.3.
Specifications subject to change without notice.
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