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參數(shù)資料
| 型號： | REF192GS |
| 廠商： | ANALOG DEVICES INC |
| 元件分類： | 基準電壓源/電流源 |
| 英文描述： | Precision Micropower, Low Dropout, Voltage References |
| 中文描述： | 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 2.5 V, PDSO8 |
| 封裝： | MS-012AA, SOIC-8 |
| 文件頁數(shù)： | 10/23頁 |
| 文件大?。?/td> | 238K |
| 代理商： | REF192GS |
REF19x Series
REF195–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
–10–
REV. D
Parameter
Symbol
Condition
Min
Typ
Max
Units
TEMPERATURE COEFFICIENT
1, 2
“E” Grade
“F” Grade
“G” Grade
3
TCV
O
/
°
C
I
OUT
= 0 mA
2
5
10
ppm/
°
C
ppm/
°
C
ppm/
°
C
LINE REGULATION
4
“E” Grade
“F & G” Grades
V
O
/
V
IN
5.20 V
≤
V
S
≤
15 V, I
OUT
= 0 mA
5
10
ppm/V
ppm/V
LOAD REGULATION
4
“E” Grade
“F & G” Grades
V
O
/
V
LOAD
V
S
= 6.45 V, 0
≤
I
OUT
≤
20 mA
5
10
ppm/mA
ppm/mA
DROPOUT VOLTAGE
V
S
– V
O
V
S
= 5.60 V, I
LOAD
= 10 mA
V
S
= 6.45 V, I
LOAD
= 20 mA
0.60
1.45
V
V
NOTES
1
For proper operation, a 1
μ
F capacitor is required between the output pin and the GND pin of the device.
2
TCV
O
is defined as the ratio of output change with temperature variation to the specified temperature range expressed in ppm/
°
C.
TCV
= (
V max–V min
)/V
O
(
T
MAX
–T
MIN
).
3
Guaranteed by characterization.
4
Line and load regulation specifications include the effect of self-heating.
Specifications subject to change without notice.
REF196–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Condition
Min
Typ
Max
Units
INITIAL ACCURACY
1
“G” Grade
V
O
I
OUT
= 0 mA
3.290
3.3
3.310
V
LINE REGULATION
2
“G” Grades
V
O
/
V
IN
3.50 V
≤
V
S
≤
15 V, I
OUT
= 0 mA
4
8
ppm/V
LOAD REGULATION
2
“G” Grade
V
O
/
V
LOAD
V
S
= 5.0 V, 0
≤
I
OUT
≤
30 mA
6
15
ppm/mA
DROPOUT VOLTAGE
V
S
– V
O
V
S
= 4.1 V, I
LOAD
= 10 mA
V
S
= 4.3 V, I
LOAD
= 30 mA
0.80
1.00
V
V
LONG-TERM STABILITY
3
V
O
1000 Hours @ +125
°
C
1.2
mV
NOISE VOLTAGE
e
N
0.1 Hz to 10 Hz
33
μ
V p-p
NOTES
1
Initial accuracy includes temperature hysteresis effect.
2
Line and load regulation specifications include the effect of self-heating.
3
Long-term drift is guaranteed by 1000 hours life test performed on three independent wafer lots at +125
°
C, with an LTPD of 1.3.
Specifications subject to change without notice.
(@ V
S
= +5.20 V, –40
8
C
≤
T
A
≤
+125
8
C unless otherwise noted)
(@ V
S
= +3.5 V, T
A
= +25
8
C unless otherwise noted)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| REF193 | Precision Micropower, Low Dropout, Voltage References |
| REF193ES | Precision Micropower, Low Dropout, Voltage References |
| REF193FS | Precision Micropower, Low Dropout, Voltage References |
| REF193GS | Precision Micropower, Low Dropout, Voltage References |
| REF193GRU | Precision Micropower, Low Dropout, Voltage References |
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