參數(shù)資料
型號: RC28F160C3BD70
廠商: INTEL CORP
元件分類: PROM
英文描述: 1M X 16 FLASH 3V PROM, 70 ns, PBGA64
封裝: BGA-64
文件頁數(shù): 46/72頁
文件大?。?/td> 1083K
代理商: RC28F160C3BD70
Intel Advanced+ Boot Block Flash Memory (C3)
May 2005
Intel Advanced+ Boot Block Flash Memory (C3)
Datasheet
50
Order Number: 290645, Revision: 023
11.1.1
Locking Operation
The locking status of each block can be set to Locked, Unlocked, or Lock-Down, each of which
will be described in the following sections. See Figure 14, “Block Locking State Diagram” on
The following paragraph concisely summarizes the locking functionality.
11.1.1.1
Locked State
The default state of all blocks upon power-up or reset is locked (states [001] or [101]). Locked
blocks are fully protected from alteration. Any Program or Erase operations attempted on a locked
block will return an error on bit SR[1]. The state of a locked block can be changed to Unlocked or
Lock Down using the appropriate software commands. An Unlocked block can be locked by
writing the Lock command sequence, 0x60 followed by 0x01.
11.1.1.2
Unlocked State
Unlocked blocks (states [000], [100], [110]) can be programmed or erased. All unlocked blocks
return to the Locked state when the device is reset or powered down. The status of an unlocked
block can be changed to Locked or Locked Down using the appropriate software commands. A
Locked block can be unlocked by writing the Unlock command sequence, 0x60 followed by 0xD0.
11.1.1.3
Lock-Down State
Blocks that are Locked-Down (state [011]) are protected from Program and Erase operations (just
like Locked blocks), but their protection status cannot be changed using software commands alone.
A Locked or Unlocked block can be Locked Down by writing the Lock-Down command sequence,
0x60 followed by 0x2F. Locked-Down blocks revert to the Locked state when the device is reset or
powered down.
The Lock-Down function depends on the WP# input pin. When WP# = 0, blocks in Lock Down
[011] are protected from program, erase, and lock status changes. When WP# = 1, the Lock-Down
function is disabled ([111]), and Locked-Down blocks can be individually unlocked by software
command to the [110] state, where they can be erased and programmed. These blocks can then be
relocked [111] and unlocked [110] as required while WP# remains high. When WP# goes low,
blocks that were previously Locked Down return to the Lock-Down state [011], regardless of any
changes made while WP# was high. Device reset or power-down resets all blocks, including those
in Lock-Down, to Locked state.
11.2
Reading Block-Lock Status
The Lock status of each block can be read in read-identifier mode of the device by issuing the read-
identifier command (0x90). Subsequent reads at Block Address + 0x00002 will output the Lock
status of that block. The Lock status is represented by DQ0 and DQ1:
DQ0 indicates the Block Lock/Unlock status and is set by the Lock command and cleared by
the Unlock command. It is also automatically set when entering Lock Down.
DQ1 indicates Lock-Down status and is set by the Lock-Down command. It cannot be cleared
by software—only by device reset or power-down.
相關PDF資料
PDF描述
RC4194K DUAL OUTPUT, ADJUSTABLE MIXED REGULATOR, MBFM9
RM4194K DUAL OUTPUT, ADJUSTABLE MIXED REGULATOR, MBFM9
RC4194D DUAL OUTPUT, ADJUSTABLE MIXED REGULATOR, CDIP14
RM4194D/883B DUAL OUTPUT, ADJUSTABLE MIXED REGULATOR, CDIP14
RM4194D DUAL OUTPUT, ADJUSTABLE MIXED REGULATOR, CDIP14
相關代理商/技術參數(shù)
參數(shù)描述
RC28F160C3BD70A 功能描述:IC FLASH 16MBIT 70NS 64BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M(2M x 8,1M x 16) 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP(0.724",18.40mm 寬) 供應商設備封裝:48-TSOP 包裝:托盤
RC28F160C3TA110 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3)
RC28F160C3TA70 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3)
RC28F160C3TA90 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3)
RC28F160C3TA90SB93 功能描述:IC FLASH 16MBIT 90NS 64BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:150 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-VFDFN 裸露焊盤 供應商設備封裝:8-DFN(2x3) 包裝:管件 產(chǎn)品目錄頁面:1445 (CN2011-ZH PDF)