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參數(shù)資料
| 型號(hào)： | RA30H1317M-01 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 135-175MHz 30W 12.5V MOBILE RADIO |
| 中文描述： | 135 - 175MHz時(shí)功率30W 12.5V移動(dòng)通信 |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大?。?/td> | 65K |
| 代理商： | RA30H1317M-01 |
MITSUBISHI RF MOSFET MODULE
R A 3 0 H 1 3 1 7 M
135-175MHz
30W
12.5V MOBILE RADIO
RA30H1317M
MITSUBISHI ELECTRIC
1/9
23 Dec 2002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
DESCRIPTION
The RA30H1317M is a 30-watt RF MOSFET Amplifier Module
for 12.5-volt mobile radios that operate in the 135- to 175-MHz
range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (V
GG
=0V), only a small leakage current flows into the drain
and the RF input signal attenuates up to 60 dB. The output power
and drain current increase as the gate voltage increases. With a
gate voltage around 3.5V (minimum), output power and drain
current increases substantially. The nominal output power
becomes available at 4V (typical) and 5V (maximum). At V
GG
=5V,
the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
Enhancement-Mode MOSFET Transistors
(I
DD
0 @ V
DD
=12.5V, V
GG
=0V)
P
out
>30W,
η
T
>40% @ V
DD
=12.5V, V
GG
=5V, P
in
=50mW
Broadband Frequency Range: 135-175MHz
Low-Power Control Current I
GG
=1mA (typ) at V
GG
=5V
Module Size: 66 x 21 x 9.88 mm
Linear operation is possible by setting the quiescent drain current
with the gate voltage and controlling the output power with the
input power
ORDERING INFORMATION:
ORDER NUMBER
SUPPLY FORM
RA30H1317M-E01
RA30H1317M-01
(Japan - packed without desiccator)
Antistatic tray,
10 modules/tray
BLOCK
DIAGRAM
1 RF Input (P
in
)
2 Gate Voltage (V
GG
), Power Control
3 Drain Voltage (V
DD
), Battery
4 RF Output (P
out
)
5 RF Ground (Case)
3
2
4
1
5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RA30H1317M-E01 | 135-175MHz 30W 12.5V MOBILE RADIO |
| RA30H1317M | 135-175MHz 30W 12.5V MOBILE RADIO |
| RA30H2127M-01 | 210-270MHz 30W 12.5V MOBILE RADIO |
| RA30H2127M-E01 | 210-270MHz 30W 12.5V MOBILE RADIO |
| RA30H2127M | 210-270MHz 30W 12.5V MOBILE RADIO |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RA30H1317M1 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:RF MOSFET MODULE 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO |
| RA30H1317M1_10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO |
| RA30H1317M1_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:RoHS Compliance, 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO |
| RA30H1317M-101 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO |
| RA30H1317M1-101 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:RF MOSFET MODULE 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO |
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