參數(shù)資料
型號： RA20H8994M-01
廠商： Mitsubishi Electric Corporation
英文描述： 896-902/ 935-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO
中文描述： 896-902 / 935 - 941MHz 20瓦12.5V，3階段制造。對于移動通信
文件頁數(shù)： 2/8頁
文件大?。?/td> 68K
代理商： RA20H8994M-01
MITSUBISHI RF POWER MODULE
R A 2 0 H 8 9 9 4 M
RA20H8994M
MITSUBISHI ELECTRIC
2/9
25 April 2003
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MAXIMUM RATINGS
(T
case
=+25°C, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
RATING
UNIT
V
DD
Drain Voltage
V
GG
<5V
17
V
V
GG
Gate Voltage
V
DD
<12.5V, P
in
=0mW
6
V
P
in
Input Power
100
mW
P
out
Output Power
f=896-902/ 935-941MHz,
Z
G
=Z
L
=50
40
W
T
case(OP)
Operation Case Temperature Range
-30 to +110
°C
T
stg
Storage Temperature Range
The above parameters are independently guaranteed.
-40 to +110
°C
ELECTRICAL CHARACTERISTICS
(T
case
=+25°C, Z
G
=Z
L
=50
, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
f
Frequency Range
896-902/ 935-941
MHz
P
out
Output Power
V
DD
=12.5V, V
GG
=5V, P
in
=50mW
20
W
η
T
Total Efficiency
2
nd
Harmonic
25
%
2f
o
-30
dBc
ρ
in
Input VSWR
3:1
—
I
GG
Gate Current
P
out
=20W(V
GG
control)
V
DD
=12.5V
P
in
=50mW
1
mA
—
Stability
V
DD
=10.0-15.5V, P
in
=25-70mW,
P
out
=1 to 25W (V
GG
control), Load VSWR=3:1
V
DD
=15.2V, P
in
=50mW, P
out
=20W (V
GG
control),
Load VSWR=8:1
No parasitic oscillation
—
—
Load VSWR Tolerance
No degradation or
destroy
—
All parameters, conditions, ratings, and limits are subject to change without notice.
相關(guān)PDF資料
PDF描述
RA20H8994M 896-902/ 935-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO
RA20H8994M-E01 896-902/ 935-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO
RA254 25.0 Amp High Current Plastic Silicon Rectifier 50 to 1000 Volts
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RA20H8994M-101 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:896-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO
RA20H8994M-E01 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:896-902/ 935-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO
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