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參數(shù)資料
| 型號(hào)： | RA13H4047M |
| 廠商： | Mitsubishi Electric Corporation |
| 元件分類： | MOSFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N溝道的PowerTrench MOSFET的 |
| 文件頁(yè)數(shù)： | 8/9頁(yè) |
| 文件大?。?/td> | 85K |
| 代理商： | RA13H4047M |
MITSUBISHI RF POWER MODULE
R A13H4047M
RA13H4047M
MITSUBISHI ELECTRIC
8/9
24 April 2003
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Output Power Control:
Depending on linearity, the following two methods are recommended to control the output power:
a) Non-linear FM modulation:
By the gate voltage (V
GG
).
When the gate voltage is close to zero, the RF input signal is attenuated up to 60 dB and only a small leakage
current flows from the battery into the drain.
Around V
GG
=4V, the output power and drain current increases substantially.
Around V
GG
=4.5V (typical) to V
GG
=5V (maximum), the nominal output power becomes available.
b) Linear AM modulation:
By RF input power P
in
.
The gate voltage is used to set the drain’s quiescent current for the required linearity.
Oscillation:
To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain,
a 4.700 pF chip capacitor, located close to the module, and a 22 μF (or more) electrolytic capacitor.
When an amplifier circuit around this module shows oscillation, the following may be checked:
a) Do the bias decoupling capacitors have a low inductance pass to the case of the module
b) Is the load impedance Z
L
=50
c) Is the source impedance Z
G
=50
Frequent on/off switching:
In base stations, frequent on/off switching can cause thermal expansion of the resin that coats the transistor chips
and can result in reduced or no output power. The bond wires in the resin will break after long-term thermally induced
mechanical stress.
Quality:
Mitsubishi Electric is not liable for failures resulting from base station operation time or operating conditions
exceeding those of mobile radios.
This module technology results from more than 20 years of experience, field proven in tens of millions of mobile
radios. Currently, most returned modules show failures such as ESD, substrate crack, and transistor burnout, which
are caused by improper handling or exceeding recommended operating conditions. Few degradation failures are
found.
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur. Trouble with semiconductors may lead to personal injury, fire or property
damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as
(i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material, or (iii) prevention against any malfunction or
mishap.
Keep safety first in your circuit designs!
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RA13H4047M-01 | 30V N-Channel PowerTrench MOSFET |
| RA13H4047M-E01 | 30V N-Channel PowerTrench MOSFET |
| RA13H4452M-E01 | 440-520MHz 13W 12.5V MOBILE RADIO |
| RA13H4452M | 440-520MHz 13W 12.5V MOBILE RADIO |
| RA13H4452M-01 | 440-520MHz 13W 12.5V MOBILE RADIO |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RA13H4047M_06 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:RoHS Compliance , 400-470MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO |
| RA13H4047M_10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:400-470MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO |
| RA13H4047M_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:RoHS Compliance , 400-470MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO |
| RA13H4047M-01 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MITSUBISHI RF MOSFET MODULE 400-470MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO |
| RA13H4047M-101 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:RoHS Compliance , 400-470MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO |
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