參數(shù)資料
型號(hào): RA07N4047M
廠商: Mitsubishi Electric Corporation
英文描述: 388 POS 1.27MM PITCH BGA SOCKET
中文描述: 三菱射頻MOSFET模塊
文件頁(yè)數(shù): 1/9頁(yè)
文件大?。?/td> 62K
代理商: RA07N4047M
MITSUBISHI RF MOSFET MODULE
R A 0 7 N4 0 4 7 M
400-470MHz
7.5W
9.6V PORTABLE RADIO
RA07N4047M
MITSUBISHI ELECTRIC
1/9
23 Dec 2002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
DESCRIPTION
The RA07N4047M is a 7.5-watt RF MOSFET Amplifier Module
for 9.6-volt portable radios that operate in the 400- to 470-MHz
range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (V
GG
=0V), only a small leakage current flows into the drain
and the RF input signal attenuates up to 60 dB. The output power
and drain current increase as the gate voltage increases. With a
gate voltage around 2.5V (minimum), output power and drain
current increases substantially. The nominal output power
becomes available at 3V (typical) and 3.5V (maximum). At
V
GG
=3.5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
Enhancement-Mode MOSFET Transistors
(I
DD
0 @ V
DD
=9.6V, V
GG
=0V)
P
out
>7.5W @ V
DD
=9.6V, V
GG
=3.5V, P
in
=20mW
η
T
>43% @ P
out
=7W (V
GG
control), V
DD
=9.6V, P
in
=20mW
Broadband Frequency Range: 400-470MHz
Low-Power Control Current I
GG
=1mA (typ) at V
GG
=3.5V
Module Size: 30 x 10 x 5.4 mm
Linear operation is possible by setting the quiescent drain current
with the gate voltage and controlling the output power with the
input power
ORDERING INFORMATION:
ORDER NUMBER
SUPPLY FORM
RA07N4047M-E01
RA07N4047M-01
(Japan - packed without desiccator)
Antistatic tray,
25 modules/tray
BLOCK
DIAGRAM
1 RF Input (P
in
)
2 Gate Voltage (V
GG
), Power Control
3 Drain Voltage (V
DD
), Battery
4 RF Output (P
out
)
5 RF Ground (Case)
3
2
4
1
5
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