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GENERAL
PHOTOMULTIPLIER TUBE
R7517
Figure 1: Typical Spectral Response
TPMSB0174EA
0.01
0.1
100
1000
100
200
300
400
500
600
700
800
WAVELENGTH (nm)
C
Q
10
1
CATHODE
RADIANT
SENSITIVITY
QUANTUM
EFFICIENCY
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. 2006 Hamamatsu Photonics K.K.
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
SPECIFICATIONS
FEATURES
G
Wide Spectral Response .........................
G
High Cathode Sensitivity
Luminous .................................................
Radiant at 420 nm ...................................
Quantum Efficiency at 220 nm ........................
G
High Anode Sensitivity (at 1000 V)
Luminous .................................................
Radiant at 420 nm ............................
APPLICATIONS
G
Fluorescence Spectrophotometers
G
Fluorescence Immuno Assay
G
SO
2
Monitor (UV Fluorescence)
185 nm to 760 nm
160
μ
A/lm Typ.
105 mA/W Typ.
40 % Typ.
1600 A/lm Typ.
10.5
×
10
5
A/W Typ.
High QE, Bialkali Photocathode
28 mm (1-1/8 Inch) Diameter, 9-Stage, Side-On Type
Parameter
Description/Value
185 to 760
420
Bialkali
8
×
24
UV glass
Bialkali
Circular-cage
9
4
6
11-pin base JEDEC No. B11-88
Approx. 45
-30 to +50
-30 to +50
E678–11A (Sold Separately)
E717–63 (Sold Separately)
E717–74 (Sold Separately)
Unit
nm
nm
—
mm
—
—
—
—
pF
pF
—
g
°
C
°
C
—
Spectral Response
Wavelength of Maximum Response
MateriaI
Minimum Effective Area
Photocathode
Window Material
Dynode
Direct Interelectrode
Capacitances
Base
Weight
Operating Ambient Temperature
Storage Temperature
SuitabIe Socket
SuitabIe Socket Assembly
—
Secondary Emitting Surface
Structure
Number of Stages
Anode to Last Dynode
Anode to All Other Electrodes