參數(shù)資料
型號: R1448NS16H
廠商: WESTCODE SEMICONDUCTORS LTD
元件分類: 晶閘管
英文描述: 2916 A, 1600 V, SCR
文件頁數(shù): 5/12頁
文件大?。?/td> 594K
代理商: R1448NS16H
WESTCODE
WESTCODE An IXYS Company
Distributed Gate Thyristor Types R1448NS14# to R1448NS20#
Data Sheet. Type R1448NS14# to R1448NS20# Issue 2
Page 2 of 12
August, 2003
Characteristics
PARAMETER
MIN.
TYP.
MAX. TEST CONDITIONS (Note 1)
UNITS
VTM
Maximum peak on-state voltage
-
1.80
ITM=2000A
V
VTM
Maximum peak on-state voltage
-
2.35
ITM=4350A
V
VT0
Threshold voltage
-
1.30
V
rT
Slope resistance
-
0.25
m
(dv/dt)cr Critical rate of rise of off-state voltage
200
-
VD=80% VDRM, Linear ramp, Gate o/c
V/
s
IDRM
Peak off-state current
-
150
Rated VDRM
mA
IRRM
Peak reverse current
-
150
Rated VRRM
mA
VGT
Gate trigger voltage
-
3.0
V
IGT
Gate trigger current
-
300
Tj=25°C
VD=10V, IT=3A
mA
VGD
Gate non-trigger voltage
-
0.25
Rated VDRM
V
IH
Holding current
-
1000
Tj=25°C
mA
tgd
Gate controlled turn-on delay time
-
0.6
1.0
tgt
Turn-on time
-
1.2
2.0
VD=67% VDRM, ITM=1000A, di/dt=60A/s,
IFG=2A, tr=0.5s, Tj=25°C
s
Qrr
Recovered charge
-
950
-
C
Qra
Recovered charge, 50% Chord
-
500
600
C
Irm
Reverse recovery current
-
200
-
A
trr
Reverse recovery time
-
5.0
-
ITM=1000A, tp=1000s, di/dt=60A/s,
Vr=50V
s
35
-
60
ITM=1000A, tp=1000s, di/dt=60A/s,
Vr=50V, Vdr=33%VDRM, dVdr/dt=20V/s
tq
Turn-off time (note 2)
40
-
65
ITM=1000A, tp=1000s, di/dt=60A/s,
Vr=50V, Vdr=33%VDRM, dVdr/dt=200V/s
s
-
0.022 Double side cooled
K/W
RthJK
Thermal resistance, junction to heatsink
-
0.044 Single side cooled
K/W
F
Mounting force
19
-
26
kN
Wt
Weight
-
510
-
g
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) The required tq (specified with dVdr/dt=200V/s) is represented by a ‘#’ in the device part number. See ordering information for
details of tq codes.
相關(guān)PDF資料
PDF描述
R1448NS16J 2916 A, 1600 V, SCR
R1448NS16K 2916 A, 1600 V, SCR
R1448NS16L 2916 A, 1600 V, SCR
R1448NS18K 2916 A, 1800 V, SCR
R1448NS20K 2916 A, 2000 V, SCR
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