參數(shù)資料
型號(hào): QSB363C.ZR
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 光敏三極管
英文描述: PHOTO TRANSISTOR DETECTOR
封裝: PLASTIC PACKAGE-2
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 471K
代理商: QSB363C.ZR
2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
September 2005
QSB363C Rev. 1.0.2
QSB363C
Subminiature
Plastic
Silicon
Infrared
Phototransistor
QSB363C
Subminiature Plastic Silicon Infrared Phototransistor
Features
■ NPN Silicon Phototransistor
■ T-3/4 (2mm) Surface Mount Package
■ Medium Wide Beam Angle, 24°
■ Clear Plastic Package
■ Matched Emitters: QEB363 or QEB373
■ Tape & Reel Option (See Tape & Reel Specications)
■ Lead Form Options: Gullwing, Yoke, Z-Bend
Description
The QSB363
C is a silicon phototransistor encapsulated in a clear
infrared T-3/4 package.
Package Dimensions
SCHEMATIC
EMITTER
COLLECTOR
0.074 (1.9)
0.008 (0.21)
0.004 (0.11)
0.106 (2.7)
0.091 (2.3)
0.055 (1.4)
0.024 (0.6)
0.016 (0.4)
0.087 (2.2)
0.071 (1.8)
0.019 (0.5)
0.012 (0.3)
0.276 (7.0)
MIN
0.024 (0.6)
.059 (1.5)
.051 (1.3)
.118 (3.0)
.102 (2.6)
EMITTER
NOTES:
1. Dimensions are in inches (mm).
2. Tolerance of
± .010 (.25) on all non nominal dimensions
unless otherwise specified.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
QSB363GR 功能描述:光電晶體管 Phototransistor Si Infrared RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1
QSB363YR 功能描述:光電晶體管 Phototransistor Si Infrared RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1
QSB363ZR 功能描述:光電晶體管 Phototransistor Si Infrared RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1
QSB373ZR 功能描述:光電晶體管 T-3- 4 PHOTO XSTR DETECTOR RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1
QSB-40-01 功能描述:風(fēng)扇電線及配件 40mm EMI FILTR SHLD RoHS:否 制造商:ebm-papst 類型:Finger Guard 適合風(fēng)扇大小:120 mm 系列: