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參數(shù)資料
| 型號(hào)： | Q67040S41232 |
| 英文描述： | TRANSISTOR SMD LEISTUNGS MOSFET |
| 中文描述： | 晶體管MOSFET的貼片LEISTUNGS |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 131K |
| 代理商： | Q67040S41232 |
SPD 28N05L
Data Sheet
2
06.99
Thermal Characteristics
Parameter
Values
Symbol
Unit
typ.
max.
min.
Characteristics
RthJC
-
2
K/W
Thermal resistance, junction - case
-
Thermal resistance, junction - ambient, leded
RthJA
-
100
-
75
50
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area1)
RthJA
Electrical Characteristics, at
Tj = 25 C, unless otherwise specified
Parameter
Symbol
Unit
Values
min.
max.
typ.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA
-
V(BR)DSS
55
-
V
Gate threshold voltage,
VGS = VDS
ID = 50 A
VGS(th)
2
1.6
1.2
Zero gate voltage drain current
VDS = 50 V, VGS = 0 V, Tj = 25 C
VDS = 50 V, VGS = 0 V, Tj = 150 C
-
IDSS
A
1
100
0.1
-
Gate-source leakage current
VGS = 20 V, VDS = 0 V
IGSS
-
10
nA
100
Drain-Source on-state resistance
VGS = 4.5 V, ID = 20 A
VGS = 10 V, ID = 20 A
RDS(on)
-
0.04
0.0235
0.044
0.026
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain
connection. PCB is vertical without blown air.
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