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參數(shù)資料
| 型號： | Q65210-D250-W5 |
| 廠商： | SIEMENS AG |
| 英文描述： | Differential Magnetoresistive Sensor |
| 中文描述： | 差分磁阻傳感器 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 220K |
| 代理商： | Q65210-D250-W5 |
Semiconductor Group
2
FP 210 D 250-22
Maximum ratings
Characteristics (
T
A
= 25
°
C)
Measuring arrangements
By approaching a soft iron part close to the sensor a change in its resistance is obtained.
The potential divider circuit of the magneto resistor causes a reduction in the
temperature dependence of the output voltage
V
OUT
.
Parameter
Operating temperature
Storage temperature
Power dissipation
1)
Supply voltage
2)
Insulation voltage between
terminals and casing
Thermal conductivity
Symbol
T
A
T
stg
P
tot
V
IN
V
I
Value
– 40 / + 140
– 40 / + 150
400
7.5
> 100
Unit
°
C
°
C
mW
V
V
G
thA
≥
5
mW/K
Nominal supply voltage
Total resistance, (
δ
=
∞
,
I
≤
1 mA)
Center symmetry
3)
(
δ
=
∞
)
Offset voltage
4)
(at
V
IN N
and
δ
=
∞
)
Open circuit output voltage
5)
(at
V
IN N
and
δ
= 0.2 mm)
Cut-off frequency
V
IN N
R
1-3
M
V
0
5
1000
…
1600
≤
10
≤
130
V
%
mV
V
out pp
> 1100
mV
f
c
> 20
kHz
1) Corresponding to diagram
P
tot
=
f
(
T
A
)
2) Corresponding to diagram
V
IN
=
f(T
A
)
3)
M
----------------------------
=
R
1
4) Corresponding to measuring circuit in
Fig. 2
5) Corresponding to measuring circuit in
Fig. 2
and arrangement as shown in
Fig.
1
R
R
3
–
×
100% for
R
1-2
>
R
2-3
2
–
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