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參數(shù)資料
| 型號(hào)： | Q6008DH4 |
| 廠商： | Littelfuse, Inc. |
| 英文描述： | Alternistor Triacs (6 A to 40 A) |
| 中文描述： | 交變雙向（6 A至40甲） |
| 文件頁(yè)數(shù)： | 4/10頁(yè) |
| 文件大?。?/td> | 189K |
| 代理商： | Q6008DH4 |
Alternistor Triacs
Data Sheets
http://www.teccor.com
+1 972-580-7777
E4 - 4
2002 Teccor Electronics
Thyristor Product Catalog
See “General Notes” and “Electrical Specification Notes” on page E4 - 5.
Test Conditions
di/dt
— Maximum rate-of-change of on-state current
dv/dt
— Critical rate-of-rise of off-state voltage at rated V
DRM
gate open
dv/dt(c)
— Critical rate-of-rise of commutation voltage at rated V
DRM
and I
T(RMS)
commutating di/dt = 0.54 rated I
T(RMS)
/ms; gate
unenergized
I
2
t
— RMS surge (non-repetitive) on-state current for period of 8.3 ms
for fusing
I
DRM
— Peak off-state current gate open; V
DRM
= maximum rated value
I
GT
— DC gate trigger current in specific operating quadrants;
V
D
= 12 V dc
I
GTM
— Peak gate trigger current
I
H
— Holding current (DC); gate open
I
T(RMS)
— RMS on-state current conduction angle of 360°
I
TSM
— Peak one-cycle surge
P
G(AV)
— Average gate power dissipation
P
GM
— Peak gate power dissipation;
I
GT
I
GTM
t
gt
— Gate controlled turn-on time; I
GT
= 300 mA with 0.1 μs rise time
V
DRM
— Repetitive peak blocking voltage
V
GT
— DC gate trigger voltage; V
D
= 12 V dc
V
TM
— Peak on-state voltage at maximum rated RMS current
I
T(RMS)
(4)(16)
Part Number
V
DRM
(1)
I
GT
Isolated
Non-isolated
T0-220
TO-218
(16)
See “Package Dimensions” section for variations. (11)
TO-218X
TO-220
TO-263
D
Pak
Volts
(3) (7) (15) (17)
mAmps
QI
QII
MAX
20
20
20
20
20
35
35
35
35
35
80
80
80
80
80
80
80
80
80
80
50
50
50
50
50
50
100
100
100
100
100
QIII
MAX
16 A
Q2016LH3
Q4016LH3
Q6016LH3
Q8016LH3
QK016LH3
Q2016LH4
Q4016LH4
Q6016LH4
Q8016LH4
QK016LH4
Q2016LH6
Q4016LH6
Q6016LH6
Q8016LH6
QK016LH6
Q2025L6
Q4025L6
Q6025L6
Q8025L6
QK025L6
Q2030LH5
Q4030LH5
Q6030LH5
Q2016RH3
Q4016RH3
Q6016RH3
Q8016RH3
QK016RH3
Q2016RH4
Q4016RH4
Q6016RH4
Q8016RH4
QK016RH4
Q2016RH6
Q4016RH6
Q6016RH6
Q8016RH6
QK016RH6
Q2025R6
Q4025R6
Q6025R6
Q8025R6
QK025R6
Q2016NH3
Q4016NH3
Q6016NH3
Q8016NH3
QK016NH3
Q2016NH4
Q4016NH4
Q6016NH4
Q8016NH4
QK016NH4
Q2016NH6
Q4016NH6
Q6016NH6
Q8016NH6
QK016NH6
Q2025NH6
Q4025NH6
Q6025NH6
Q8025NH6
QK025NH6
200
400
600
800
1000
200
400
600
800
1000
200
400
600
800
1000
200
400
600
800
1000
200
400
600
200
400
600
200
400
600
800
1000
20
20
20
20
20
35
35
35
35
35
80
80
80
80
80
80
80
80
80
80
50
50
50
50
50
50
100
100
100
100
100
20
20
20
20
20
35
35
35
35
35
80
80
80
80
80
80
80
80
80
80
50
50
50
50
50
50
100
100
100
100
100
25 A
Q2025K6
Q4025K6
Q6025K6
Q8025K6
QK025K6
Q2025J6
Q4025J6
Q6025J6
Q8025J6
30 A
35 A
Q2035RH5
Q4035RH5
Q6035RH5
Q2035NH5
Q4035NH5
Q6035NH5
40 A
Q2040K7
Q4040K7
Q6040K7
Q8040K7
QK040K7
Q2040J7
Q4040J7
Q6040J7
Q8040J7
MT1
MT2
G
K
G
A
K
A
G
A
A
MT1
G
MT2
MT2
MT2
MT2
MT1
G
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| Q6008DH4RP | 功能描述:雙向可控硅 600V 8A 35-35-35mA RoHS:否 制造商:STMicroelectronics 開(kāi)啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| Q6008DH4TP | 功能描述:雙向可控硅 600V 8A 35-35-35mA RoHS:否 制造商:STMicroelectronics 開(kāi)啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| Q6008F51 | 功能描述:雙向可控硅 600V 8A 50-50-50mA RoHS:否 制造商:STMicroelectronics 開(kāi)啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| Q6008L4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC|600V V(DRM)|8A I(T)RMS|TO-220 |
| Q6008L456 | 制造商:LITTELFUSE 制造商全稱:Littelfuse 功能描述:8 Amp Sensitive, Standard & Alternistor (High Commutation) Triacs |
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