參數(shù)資料
型號： Q2X4
元件分類： 晶閘管
英文描述： 200 V, 0.8 A, 4 QUADRANT LOGIC LEVEL TRIAC
封裝： COMPAK-3
文件頁數(shù)： 6/10頁
文件大?。?/td> 155K
代理商： Q2X4
Data Sheets
Triacs
2004 Teccor Electronics
E2 - 5
http://www.teccor.com
Thyristor Product Catalog
+1 972-580-7777
Electrical Specification Notes
(1)
For either polarity of MT2 with reference to MT1 terminal
(2)
For either polarity of gate voltage (VGT) with reference to MT1
terminal
(3)
See Gate Characteristics and Definition of Quadrants.
(4)
See Figure E2.1 through Figure E2.7 for current rating at specific
operating temperature.
(5)
See Figure E2.8 through Figure E2.10 for iT versus vT.
(6)
See Figure E2.12 for VGT versus TC.
(7)
See Figure E2.11 for IGT versus TC.
(8)
See Figure E2.14 for IH versus TC.
(9)
See Figure E2.13 for surge rating with specific durations.
(10) See Figure E2.15 for tgt versus IGT.
(11) See package outlines for lead form configurations. When ordering
special lead forming, add type number as suffix to part number.
(12) Initial on-state current = 200 mA dc for 0.8 A to10 A devices,
400 mA dc for 15 A to 35 A devices
(13) See Figure E2.1 through Figure E2.6 for maximum allowable case
temperature at maximum rated current.
(14) Pulse width
≤10 s; I
GT ≤ IGTM
(15) RL = 60 for 0.8 A to10 A triacs; RL = 30 for 15 A to 35 A triacs
(16) TC = TJ for test conditions in off state
(17) IGT = 300 mA for 25 A and 35 A devices
(18) Quadrants I, II, III only
(19) Minimum non-trigger VGT at 125 °C is 0.2 V for all except 50 mA
MAX QIV devices which are 0.2 V at 110 °C.
Gate Characteristics
Teccor triacs may be turned on between gate and MT1 terminals
in the following ways:
In-phase signals (with standard AC line) using Quadrants I
and III
Application of unipolar pulses (gate always positive or nega-
tive), using Quadrants II and III with negative gate pulses and
Quadrants I and IV with positive gate pulses
However, due to higher gate requirements for Quadrant IV, it
is recommended that only negative pulses be applied. If pos-
itive pulses are required, see “Sensitive Triacs” section of
this catalog or contact the factory. Also, see
Figure AN1002.8, “Amplified Gate” Thyristor Circuit.
VTM
VGT
IH
IGTM
PGM
PG(AV)
ITSM
dv/dt(c)
dv/dt
tgt
I2t
di/dt
(1) (5)
Volts
(2) (6) (15)
(18) (19)
Volts
(1) (8) (12)
mAmps
(14)
Amps
(14)
Watts
(9) (13)
Amps
(1) (4) (13)
Volts/Sec
(1)
Volts/
Sec
(10) (17)
Sec
Amps2Sec
Amps/Sec
TC = 25 °C
60/50 Hz
TC =
100 °C
TC =
125 °C
MAX
TYP
MIN
TYP
1.6
2.5
35
1.8
20
0.5
120/100
2
150
3
60
70
1.6
2.5
35
1.8
20
0.5
120/100
2
150
3
60
70
1.6
2.5
35
1.8
20
0.5
120/100
2
100
3
60
70
1.6
2.5
35
1.8
20
0.5
120/100
2
75
3
60
70
1.6
2.5
35
1.8
20
0.5
120/100
2
50
3
60
70
1.6
2.5
50
1.8
20
0.5
120/100
4
350
225
3
60
70
1.6
2.5
50
1.8
20
0.5
120/100
4
350
225
3
60
70
1.6
2.5
50
1.8
20
0.5
120/100
4
300
200
3
60
70
1.6
2.5
50
1.8
20
0.5
120/100
4
250
175
3
60
70
1.6
2.5
50
1.8
20
0.5
120/100
4
150
3
60
70
1.6
2.5
70
2
20
0.5
200/167
4
400
275
4
166
100
1.6
2.5
70
2
20
0.5
200/167
4
400
275
4
166
100
1.6
2.5
70
2
20
0.5
200/167
4
350
225
4
166
100
1.6
2.5
70
2
20
0.5
200/167
4
300
200
4
166
100
1.6
2.5
70
2
20
0.5
200/167
4
200
4
166
100
1.8
2.5
100
2
20
0.5
200/167
5
400
275
4
166
100
1.8
2.5
100
2
20
0.5
200/167
5
400
275
4
166
100
1.8
2.5
100
2
20
0.5
200/167
5
350
225
4
166
100
1.8
2.5
100
2
20
0.5
200/167
5
300
200
4
166
100
1.8
2.5
100
2
20
0.5
200/167
5
200
4
166
100
1.4
2.75
50
2
20
0.5
250/220
5
550
475
3
260
100
1.4
2.75
50
2
20
0.5
250/220
5
450
400
3
260
100
1.5
2.75
50
2
20
0.5
350/300
5
550
475
3
508
100
1.5
2.75
50
2
20
0.5
350/300
5
450
400
3
508
100
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