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參數(shù)資料
| 型號： | PY264-55PMB |
| 廠商： | Pyramid Semiconductor Corporation |
| 英文描述： | 8K X 8 REPROGRAMMABLE PROM |
| 中文描述： | 8K的× 8可重復(fù)編程胎膜早破 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 146K |
| 代理商： | PY264-55PMB |
PY264
Page 2 of 8
Document #
EPROM102
REV OR
MAXIMUM RATINGS
(1)
Symbol
V
CC
Parameter
Power Supply Pin with
Respect to GND
Value
–0.5 to +7
Unit
V
Terminal Voltage with
Respect to GND
(up to 7.0V)
–0.5 to
V
CC
+0.5
V
TERM
V
V
PP
Program Voltage
13
V
Symbol
T
A
T
BIAS
Parameter
Operating Temperature
Value
–55 to +125
Unit
°C
Temperature Under
Bias
–55 to +125
°C
T
STG
P
T
I
OUT
Storage Temperature
–65 to +150
°C
Power Dissipation
1.0
W
DC Output Current
50
mA
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Conditions Typ. Unit
V
IN
= 0V
10
pF
Output Capacitance V
OUT
= 0V
10
pF
Grade
(2)
Commercial
Ambient Temp
0°C to 70°C
Gnd
0V
Vcc
5.0V ±10%
Military
-55°C to +125°C
0V
5.0V ±10%
RECOMMENDED OPERATING CONDITIONS
CAPACITANCES
(4)
(V
CC
= 5.0V, T
A
= 25°C, f = 1.0MHz)
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage
(2)
V
PP
I
PP
V
IHP
V
ILP
Programming Supply Voltage
12
13
50
V
mA
Programming Supply Current
Symbol
V
IH
V
IL
V
HC
V
LC
V
OL
V
OH
I
LI
I
LO
Parameter
Input High Voltage
Input Low Voltage
CMOS Input High Voltage
CMOS Input Low Voltage
Output Low Voltage (TTL Load)
Output High Voltage (TTL Load)
Input Leakage Current
Output Leakage Current
Test Conditions
I
OL
= +16 mA, V
CC
= Min.
I
OH
= –4 mA, V
CC
= Min.
V
CC
= Max.
V
IN
= GND to V
CC
V
CC
= Max.,
CE
= V
IH
,
V
OUT
= GND to V
CC
PY264
Min
2.0
–0.5
(3)
V
CC
–0.2
–0.5
(3)
2.4
–10
–10
–40
Max
V
CC
0.8
V
CC
+0.5
0.2
0.4
+10
+10
+40
Unit
V
V
V
V
V
V
μA
μA
μA
I
CC
Symbol
Parameter
Temperature Range
Dynamic Operating Current*
Commercial
Military
–35
–55
Unit
mA
mA
POWER DISSIPATION CHARACTERISTICS VS. SPEED
120
120
120
100
100
100
–45
Input HIGH Programming Voltage
4.75
V
Input LOW Programming Voltage
0.4
V
COM
MIL
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