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參數(shù)資料
| 型號： | PXT2907 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | PNP switching transistor |
| 中文描述： | 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 44K |
| 代理商： | PXT2907 |
1999 Apr 14
3
Philips Semiconductors
Product specification
PNP switching transistor
PXT2907A
THERMAL CHARACTERISTICS
Note
1.
Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
R
th j-s
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
note 1
97
17
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
10
10
50
300
400
1.6
1.3
2.6
8
35
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
50 V
I
E
= 0; V
CB
=
50 V; T
amb
= 125
°
C
I
C
= 0; V
EB
=
5 V
I
C
=
0.1 mA; V
CE
=
1 V
I
C
=
1 mA; V
CE
=
1 V
I
C
=
10 mA; V
CE
=
1 V
I
C
=
150 mA; V
CE
=
2 V
I
C
=
500 mA; V
CE
=
2 V
I
C
=
150 mA; I
B
=
15 mA
I
C
=
500 mA; I
B
=
50 mA
I
C
=
150 mA; I
B
=
15 mA
I
C
=
500 mA; I
B
=
50 mA
I
E
= i
e
= 0; V
CB
=
10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
=
500 mV; f = 1 MHz
I
C
=
20 mA; V
CE
=
10 V;
f = 100 MHz
75
100
100
100
50
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
V
CEsat
collector-emitter saturation
voltage
mV
V
V
V
pF
pF
MHz
V
BEsat
base-emitter saturation voltage
C
c
C
e
f
T
collector capacitance
emitter capacitance
transition frequency
200
Switching times (between 10% and 90% levels);
(see Fig.2)
t
on
t
d
t
r
t
off
t
s
t
f
turn-on time
delay time
rise time
turn-off time
storage time
fall time
I
Con
=
150 mA; I
Bon
=
15 mA;
I
Boff
= 15 mA
40
12
30
365
300
65
ns
ns
ns
ns
ns
ns
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|---|---|
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