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參數(shù)資料
| 型號(hào)： | PTB32003X |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN microwave power transistors |
| 中文描述： | C BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | METAL CERAMIC, SOT-440A, 3 PIN |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大?。?/td> | 66K |
| 代理商： | PTB32003X |
1997 Feb 18
5
Philips Semiconductors
Product specification
NPN microwave power transistors
PTB32001X; PTB32003X;
PTB32005X
CHARACTERISTICS
T
mb
= 25
°
C unless otherwise specified.
APPLICATION INFORMATION
Microwave performance in a common-base class B selective amplifier circuit; see note 1.
Note
1.
Circuit consists of prematching circuit board in combination with complementary input and output slug tuners.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)CBO
collector-base breakdown voltage
PTB32001X
PTB32003X
PTB32005X
collector-emitter breakdown voltage I
C
= 10 mA; R
BE
= 0
collector cut-off current
PTB32001X
PTB32003X
PTB32005X
emitter cut-off current
PTB32001X
PTB32003X
PTB32005X
collector-base capacitance
PTB32001X
I
C
= 1 mA; I
E
= 0
I
C
= 2 mA; I
E
= 0
I
C
= 3 mA; I
E
= 0
40
40
40
40
V
V
V
V
V
(BR)CES
I
CBO
V
CE
= 24 V; I
E
= 0
V
CE
= 24 V; I
E
= 0
V
CE
= 24 V; I
E
= 0
10
20
30
μ
A
μ
A
μ
A
I
EBO
V
EB
= 1.5 V; I
C
= 0
V
EB
= 1.5 V; I
C
= 0
V
EB
= 1.5 V; I
C
= 0
0.2
0.4
0.6
μ
A
μ
A
μ
A
C
cb
I
E
= I
C
= 0; V
CB
= 24 V;
V
EB
= 1.5 V; f = 1 MHz
I
E
= I
C
= 0; V
CB
= 24 V;
V
EB
= 1.5 V; f = 1 MHz
I
E
= I
C
= 0; V
CB
= 24 V;
V
EB
= 1.5 V; f = 1 MHz
2.2
pF
PTB32003X
3
pF
PTB32005X
3.8
pF
C
ce
collector-emitter capacitance
PTB32001X
I
E
= I
C
= 0; V
CB
= 24 V;
V
EB
= 1.5 V; f = 1 MHz
I
E
= I
C
= 0; V
CB
= 24 V;
V
EB
= 1.5 V; f = 1 MHz
I
E
= I
C
= 0; V
CB
= 24 V;
V
EB
= 1.5 V; f = 1 MHz
0.3
pF
PTB32003X
0.6
pF
PTB32005X
0.9
pF
MODE OF
OPERATION
TYPE NUMBER
f
(GHz)
V
CC
(V)
P
L
(W)
G
po
(dB)
η
C
(%)
Class B (CW)
PTB32001X
PTB32003X
PTB32005X
3
3
3
24
24
24
>1.3; typ. 1.8
>2.5; typ. 3.0
>4.5; typ. 5.5
>8; typ. 9.5
>8; typ. 9.5
>8; typ. 9.5
>35; typ. 45
>35; typ. 45
>35; typ. 45
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