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參數(shù)資料
| 型號(hào)： | PTB32001X |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN microwave power transistors |
| 中文描述： | C BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | METAL CERAMIC, SOT-440A, 3 PIN |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 66K |
| 代理商： | PTB32001X |
1997 Feb 18
2
Philips Semiconductors
Product specification
NPN microwave power transistors
PTB32001X; PTB32003X;
PTB32005X
FEATURES
Diffused emitter ballasting resistors providing excellent
current sharing and withstanding a high VSWR
Interdigitated structure provides high emitter efficiency
Multicell geometry gives good balance of dissipated
power and low thermal resistance
Localized thick oxide auto-alignment process and gold
sandwich metallization ensure an optimum temperature
profile and excellent performance and reliability.
APPLICATIONS
Common-base, class B power amplifiers up to 4.2 GHz.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a metal ceramic SOT440A flange package with base
connected to the flange.
PINNING - SOT440A
PIN
DESCRIPTION
1
2
3
collector
emitter
base connected to flange
Fig.1 Simplified outline and symbol.
olumns
e
c
b
MAM131
3
1
2
Top view
MARKING
TYPE NUMBER
MARKING CODE
PTB32001X
PTB32003X
PTB32005X
3201X
3203X
3205X
QUICK REFERENCE DATA
Microwave performance up to T
mb
= 25
°
C in a common-base class B circuit.
TYPE NUMBER
MODE OF
OPERATION
f
(GHz)
V
CC
(V)
P
L
(W)
G
po
(dB)
η
C
(%)
Z
i
(
)
Z
L
(
)
PTB32001X
PTB32003X
PTB32005X
CW
CW
CW
3
3
3
24
24
24
≥
1.3
≥
2.5
≥
4.5
≥
8
≥
8
≥
8
≥
35
≥
35
≥
35
15 + j31
5.5 + j29
2.8 + j20
5.5 + j10
5
j2.2
4
j7
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
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PDF描述 |
|---|---|
| PTB32003X | NPN microwave power transistors |
| PTB32005X | NPN microwave power transistors |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PTB32003X | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| PTB32005X | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| PTB350B | 制造商:JITE 功能描述: |
| PTB42002X | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 500MA I(C) | FO-92 |
| PTB42003X | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 750MA I(C) | FO-41B |
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