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參數(shù)資料
| 型號： | PT800G |
| 廠商： | DIOTEC SEMICONDUCTOR AG |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Silicon Rectifiers - Single Diode Silizium-Gleichrichter - Einzeldiode |
| 中文描述： | 8 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 120K |
| 代理商： | PT800G |
PT800A ... PT800M
PT800A ... PT800M
Silicon Rectifiers – Single Diode
Silizium-Gleichrichter – Einzeldiode
Version 2007-07-06
Dimensions - Mae [mm]
Nominal current
Nennstrom
8 A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
50...1000 V
Plastic case
Kunststoffgehuse
TO-220AC
Weight approx.
Gewicht ca.
1.8 g
Plastic material has UL classification 94V-0
Gehusematerial UL94V-0 klassifiziert
Standard packaging in tubes
Standard Lieferform in Stangen
Maximum ratings and Characteristics
Grenz- und Kennwerte
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
V
RRM
[V]
Surge peak reverse voltage
Stospitzensperrspannung
V
RSM
[V]
Forward voltage
Durchlass-Spannung
V
F
[V]
1
)
I
F
= 5 A
I
F
= 8 A
PT800A
50
50
< 1.0
< 1.1
PT800B
100
100
< 1.0
< 1.1
PT800D
200
200
< 1.0
< 1.1
PT800G
400
400
< 1.0
< 1.1
PT800J
600
600
< 1.0
< 1.1
PT800K
800
800
< 1.0
< 1.1
PT800M
1000
1000
< 1.0
< 1.1
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
T
C
= 100°C
I
FAV
8 A
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
I
FRM
30 A
2
)
Peak forward surge current, 50/60 Hz half sine-wave
Stostrom für eine 50/60 Hz Sinus-Halbwelle
T
A
= 25°C
I
FSM
135/150 A
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
T
A
= 25°C
i
2
t
90 A
2
s
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
T
j
T
S
-50...+150°C
-50...+175°C
1
2
T
j
= 25°C
Max. temperature of the case T
C
= 100°C – Max. Temperatur des Gehuses T
C
= 100°C
Diotec Semiconductor AG
http://www.diotec.com/
1
1
1
3
3
10
±0.2
1.5
0.9
5.08
3.8
Type
Typ
1 2 3
4
1 2 3
4
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|---|---|
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