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參數(shù)資料
| 型號： | PT60QHX45 |
| 英文描述： | 100V Single N-Channel HEXFET Power MOSFET in a D2Pak package; A IRF540ZS with Standard Packaging |
| 中文描述： | 脈沖功率晶閘管（可控硅） -光盤/北辰設(shè)備 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 92K |
| 代理商： | PT60QHX45 |
PT60QHx45
2/6
Clamping force 19.5kN
with mounting compound
Thermal resistance - case to heatsink
R
th(c-h)
0.003
Double side
-
o
C/W
SURGE RATINGS
Conditions
10ms half sine; T
case
= 125
o
C
V
R
= 50% V
RRM
- 1/4 sine
10ms half sine; T
case
= 125
o
C
V
R
= 0
Max.
Units
Symbol
Parameter
I
TSM
Surge (non-repetitive) on-state current
I
2
t
I
2
t for fusing
I
TSM
Surge (non-repetitive) on-state current
I
2
t
I
2
t for fusing
2.52 x 10
6
A
2
s
22.5
kA
15.8 x 10
6
A
2
s
17.8
kA
THERMAL AND MECHANICAL DATA
dc
Conditions
Min.
Max.
Units
125
o
C
T
vj
Virtual junction temperature
T
stg
Storage temperature range
Reverse (blocking)
-
Thermal resistance - junction to case
R
th(j-c)
Symbol
Parameter
Clamping force
18
22
kN
–55
125
o
C
-
On-state (conducting)
-
135
o
C
Double side cooled
-
0.013
o
C/W
DYNAMIC CHARACTERISTICS
Parameter
Symbol
Conditions
Typ.
Max.
Units
I
RRM
/I
DRM
Peak reverse and off-state current
At V
RRM
/V
DRM
, T
case
= 125
o
C
From 67% V
to 40kA
Gate source 60A
t
r
= 1.5
μ
s to 1A, T
j
= 25
o
C
dV/dt
Maximum linear rate of rise of off-state voltage
To 67% V
DRM
T
j
= 125
o
C. R
gk
≤
1.5
-
100
mA
-
175
V/
μ
s
Non-repetitive
-
10000
A/
μ
s
Rate of rise of on-state current
dI/dt
V
T(TO)
Threshold voltage
At T
vj
= 125
o
C
r
T
On-state slope resistance
At T
vj
= 125
o
C
1.5
-
V
-
0.67
m
GATE TRIGGER CHARACTERISTICS AND RATINGS
V
DRM
= 5V, T
case
= 25
o
C
Conditions
Parameter
Symbol
V
GT
Gate trigger voltage
V
DRM
= 5V, T
case
= 25
o
C
I
GT
Gate trigger current
1.0
V
3
A
Max.
Units
-
-
Typ.
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