參數(shù)資料
型號： PSMN004-55W
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel logic level TrenchMOS transistor
中文描述： 100 A, 55 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
封裝： PLASTIC PACKAGE-3
文件頁數(shù)： 2/8頁
文件大?。?/td> 124K
代理商： PSMN004-55W
Philips Semiconductors
Product specification
N-channel logic level TrenchMOS
transistor
PSMN004-55W
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
E
AS
Non-repetitive avalanche
energy
CONDITIONS
Unclamped inductive load, I
= 100 A;
t
p
= 100
μ
s; T
j
prior to avalanche = 25C;
V
≤
25 V; R
GS
= 50
; V
GS
= 5 V; refer to
fig:15
MIN.
-
MAX.
357
UNIT
mJ
I
AS
Non-repetitive avalanche
current
-
100
A
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
Thermal resistance junction
to mounting base
R
th j-a
Thermal resistance junction
to ambient
CONDITIONS
MIN.
-
TYP. MAX. UNIT
-
0.5
K/W
in free air
-
45
-
K/W
ELECTRICAL CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA;
MIN.
55
42
1
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
-
-
1.5
2
-
-
-
2.3
3.2
4.2
3.6
4.5
3.8
5
6.2
9.5
0.02
100
0.05
10
-
500
226
-
36
-
106
-
26
-
118
-
848
-
336
-
V
V
V
V
V
T
j
= -55C
V
DS
= V
GS
; I
D
= 1 mA
T
j
= 175C
T
j
= -55C
R
DS(ON)
Drain-source on-state
resistance
V
GS
= 10 V; I
= 25 A
V
GS
= 5 V; I
= 25 A
V
GS
= 4.5 V; I
= 25 A
V
GS
= 5 V; I
= 25 A; T
j
= 175C
m
m
m
m
nA
μ
A
μ
A
nC
nC
nC
ns
ns
ns
ns
I
GSS
I
DSS
Gate-source leakage current V
GS
=
±
10 V; V
DS
= 0 V;
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
V
DS
= 55 V; V
GS
= 0 V;
T
j
= 175C
Q
g(tot)
Q
gs
Q
gd
t
d on
t
r
t
d off
t
f
L
d
L
d
L
s
I
D
= 100 A; V
DD
= 44 V; V
GS
= 5 V
V
DD
= 30 V; R
D
= 1.2
;
V
= 10 V; R
G
= 5.6
Resistive load
Internal drain inductance
Internal drain inductance
Internal source inductance
Measured tab to centre of die
Measured from drain lead to centre of die
Measured from source lead to source
bond pad
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
-
-
-
3.5
4.5
7.5
-
-
-
nH
nH
nH
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Feedback capacitance
-
-
-
13
1900
1250
-
-
-
nF
pF
pF
October 1999
2
Rev 1.100
相關(guān)PDF資料
PDF描述
PSMN004-60P N-channel enhancement mode field-effect transistor
PSMN005-25D N-channel logic level TrenchMOS transistor
PSMN005-55B N-channel logic level TrenchMOS transistor
PSMN008-75P N-channel enhancement mode field-effect transistor
PSMN009-100W Circular Connector; Body Material:Aluminum Alloy; Series:MS3111; Number of Contacts:6; Connector Shell Size:10; Connecting Termination:Solder; Circular Shell Style:Cable Receptacle; Circular Contact Gender:Socket
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PSMN004-55W,127 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN004-60B 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS SiliconMAX standard level FET
PSMN004-60B /T3 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN004-60B,118 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN004-60P 制造商:NXP Semiconductors 功能描述:MOSFET N TO-220
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