參數(shù)資料
型號: PPC5606BCLQ64
廠商: Freescale Semiconductor
文件頁數(shù): 75/112頁
文件大?。?/td> 0K
描述: MCU 32BIT 1M 64MHZ
標準包裝: 90
系列: MPC56xx Qorivva
核心處理器: e200z0h
芯體尺寸: 32-位
速度: 64MHz
連通性: CAN,I²C,LIN,SCI,SPI
外圍設備: POR,PWM,WDT
輸入/輸出數(shù): 121
程序存儲器容量: 1MB(1M x 8)
程序存儲器類型: 閃存
EEPROM 大小: 4K x 16
RAM 容量: 80K x 8
電壓 - 電源 (Vcc/Vdd): 3 V ~ 3.6 V
數(shù)據(jù)轉換器: A/D 15x10b,5x12b
振蕩器型: 內部
工作溫度: -40°C ~ 85°C
封裝/外殼: 144-LQFP
包裝: 托盤
Electrical characteristics
MPC5607B Microcontroller Data Sheet, Rev. 7
Freescale Semiconductor
65
4.11.3.2
Static latch-up (LU)
Two complementary static tests are required on six parts to assess the latch-up performance:
A supply overvoltage is applied to each power supply pin.
A current injection is applied to each input, output and configurable I/O pin.
These tests are compliant with the EIA/JESD 78 IC latch-up standard.
4.12
Fast external crystal oscillator (4 to 16 MHz) electrical
characteristics
The device provides an oscillator/resonator driver. Figure 11 describes a simple model of the internal oscillator driver and
provides an example of a connection for an oscillator or a resonator.
Table 36 provides the parameter description of 4 MHz to 16 MHz crystals used for the design simulations.
Table 34. ESD absolute maximum ratings1,2
1 All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for Automotive Grade Integrated
Circuits.
2 A device will be defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification requirements. Complete DC parametric and functional testing shall be performed per applicable
device specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.
Symbol
Ratings
Conditions
Class
Max value3
3 Data based on characterization results, not tested in production
Unit
VESD(HBM) Electrostatic discharge voltage
(Human Body Model)
TA = 25 °C
conforming to AEC-Q100-002
H1C
2000
V
VESD(MM) Electrostatic discharge voltage
(Machine Model)
TA = 25 °C
conforming to AEC-Q100-003
M2
200
VESD(CDM) Electrostatic discharge voltage
(Charged Device Model)
TA = 25 °C
conforming to AEC-Q100-011
C3A
500
750 (corners)
Table 35. Latch-up results
Symbol
Parameter
Conditions
Class
LU
Static latch-up class
TA = 125 °C
conforming to JESD 78
II level A
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