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參數(shù)資料
| 型號： | PNZ0158 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 光敏三極管 |
| 英文描述： | PHOTO TRANSISTOR DETECTOR |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 45K |
| 代理商： | PNZ0158 |
1
PNZ0158
Silicon NPN Phototransistor
For optical control systems
Phototransistors
Unit : mm
R0.6
12
R1.2
0.45
±0.15
2-0.45
±0.15
2-1.2
±0.3
1.2
2.9
±0.25
4.5
±0.3
3.9
±0.3
12.8
min.
Not
soldered
2.4
2.8
1.5
1.7
±0.2
0.9
0.8
2.4
2.54
1: Emitter
2: Collector
,,
,
(Input pulse)
(Output pulse)
50
RL
td : Delay time
tr : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
VCC
Sig.OUT
10%
90%
Sig.IN
td
tr
tf
Absolute Maximum Ratings (Ta = 25C)
Parameter
Symbol
Ratings
Unit
Collector to emitter voltage
VCEO
20
V
Collector current
IC
20
mA
Collector power dissipation
PC
100
mW
Operating ambient temperature
Topr
–25 to +85
C
Storage temperature
Tstg
–30 to +100
C
Electro-Optical Characteristics (Ta = 25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Dark current
ICEO
VCE = 10V
0.01
1
A
Collector photo current
ICE(L)
VCE = 10V, L = 500 lx*1
14
mA
Peak sensitivity wavelength
λ
P
VCE = 10V
800
nm
Acceptance half angle
θ
Measured from the optical axis to the half power point
40
deg.
Response time
tr, tf*2
VCC = 10V, ICE(L) = 5mA, RL = 100
410
s
Collector saturation voltage
VCE(sat)
ICE(L) = 1mA, L = 1000 lx*1
0.2
0.5
V
*1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2 Switching time measurement circuit
Features
High sensitivity
Fast response : tr = 4 s (typ.)
Wide spectral sensitivity, suited for detecting various kinds of LEDs
Small size, thin side-view type package
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