參數(shù)資料
型號(hào): PMWD30UN
廠商: NXP SEMICONDUCTORS
元件分類(lèi): 小信號(hào)晶體管
英文描述: Dual uTrenchMOS ultra low level FET
中文描述: 5000 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-153AB
封裝: PLASTIC, MO-153, TSSOP-8
文件頁(yè)數(shù): 9/12頁(yè)
文件大?。?/td> 242K
代理商: PMWD30UN
Philips Semiconductors
PMWD30UN
Dual
μ
TrenchMOS ultra low level FET
Product data
Rev. 01 — 22 January 2003
9 of 12
9397 750 10835
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
6.
Package outline
Fig 14. SOT530-1 (TSSOP8).
UNIT
A1
A
max.
A2
A3
bp
L
HE
Lp
w
y
v
c
e
D
(1)
E
(2)
Z
(1)
θ
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
0.15
0.05
0.95
0.85
0.30
0.19
0.20
0.13
3.10
2.90
4.50
4.30
0.65
6.50
6.30
0.70
0.35
8
°
0
°
0.10
0.10
0.10
0.94
DIMENSIONS (mm are the original dimensions)
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
0.70
0.50
SOT530-1
MO-153
99-12-27
00-02-24
w
M
bp
D
Z
e
0.25
1
4
8
5
θ
A
A2
A1
Lp
(A3)
detail X
L
HE
E
c
v
M
A
X
A
y
2.5
5 mm
0
scale
TSSOP8: plastic thin shrink small outline package; 8 leads; body width 4.4 mm
SOT530-1
1.10
pin 1 index
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