參數(shù)資料
型號(hào): PMK27XP
廠(chǎng)商: NXP SEMICONDUCTORS
元件分類(lèi): 小信號(hào)晶體管
英文描述: P-channel extremely low level FET
中文描述: 6500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA
封裝: PLASTIC, MS-012, SO-8
文件頁(yè)數(shù): 6/11頁(yè)
文件大?。?/td> 83K
代理商: PMK27XP
Philips Semiconductors
PMK27XP
P-channel extremely low level FET
Product data
Rev. 01 — 15 January 2004
6 of 11
9397 750 11549
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
T
j
= 25
°
C
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
=
55
°
C, 25
°
C and 125
°
C; V
DS
>
I
D
x R
DSon
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 5.
T
j
= 25
°
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03am04
40
30
20
10
0
4.5
3
1.5
0
VGS =
1.5 V
2 V
2.5 V
3 V
4 V
3.5 V
4.5 V
5 V
VDS (
V)
ID
(
A)
03am06
32
24
16
8
0
4.5
3
1.5
0
VGS (
V)
ID
(-A)
125
°
C
25
°
C
55
°
C
03am05
0
20
40
60
12
8
4
0
ID (
A)
RDSon
(m
)
VGS =
4
.5 V
2.5 V
03an41
0
0.4
0.8
1.2
1.6
100
0
100
200
Tj (
°
C)
a
a
R
DSon 25 C
°
)
----------------------------
=
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