參數(shù)資料
型號(hào): PMBF107
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: N-channel enhancement mode vertical D-MOS transistor
中文描述: 100 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件頁數(shù): 6/12頁
文件大?。?/td> 70K
代理商: PMBF107
April 1995
6
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
PMBF107
Fig.6 Typical transfer characteristic;
V
DS
= 10 V; T
j
= 25
°
C.
handbook, halfpage
0
200
100
0
1
VGS (V)
ID
(mA)
2
4
3
MDA784
Fig.7
Typical on-resistance as a function of drain
current; T
j
= 25
°
C.
handbook, halfpage
RDSon
(
)
10
1
MDA702
10
ID (mA)
10
2
10
3
14
18
22
26
VGS = 3 V
4 V
5 V
10 V
Fig.8
Typical capacitances as a function of
drain-source voltage; V
GS
= 0; f = 1 MHz;
T
j
= 25
°
C.
handbook, halfpage
0
40
VDS (V)
C
(pF)
20
0
10
20
30
MDA703
Crss
Ciss
Coss
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PMBF170,215 功能描述:MOSFET TAPE7 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PMBF170,235 功能描述:MOSFET N-channel TrenchMOS intermed level FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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