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the RF front-end. A fast locking integrated RF-PLL (SAM) allows
SMARTi+ to support Multislot Data Mode (HSCSD, GPRS class 12).
SMARTi+ is entirely controllable through a 3-wire bus interface and offers
a standard I/Q interface to the baseband chips such as the E-GOLD+ from
Infineon Technologies.
DUE TO the frequency plan used by SMARTi+, the integration of
complete IF synthesizers, the SAM RF PLL and the innovative IRM
front-end, only three filters, one external RF VCO and one power VCO
are needed for a dual-band, multi-slot design, reducing cost and
power consumption of the radio. SMARTi+ is in mass production,
manufactured in the high-volume running, B6HFC 25GHz BiCMOS
technology and is housed in VQFN 48 (7 x 7 mm2) package.
S MAR Ti
DC: Prepared for
the fut u re
SMARTi DC (PMB6256) is a fully integrated triple-band transceiver
for GSM900/GSM1800/GSM1900 voice and data transmission.
Transmitter, receivers, PLL, RF VCO, filters, and the 26MHz reference
oscillator are integrated on chip. The transmitter architecture is an
improved direct modulator, and the receiver an optimized direct
conversion receiver with integrated LNA’s for the RF front-end.
A fast locking integrated RF-PLL (SAM) allows SMARTi DC to support
Multislot Data Mode (HSCSD, GPRS class 12 and EDGE). SMARTi DC
is entirely controllable through a 3-wire bus interface and offers
a standard I/Q interface to baseband chips
such as the E-GOLD+ from Infineon
Technologies.
THE INTEGRATION of the SAM RF PLL and the RF VCO, the direct
conversion receiver and direct modulation transmitter dramatically
reduce the cost and power consumption of the GSM radio. Due to
the frequency concept used by SMARTi DC, no other active compo-
nents besides the power amplifier and SMARTi DC itself are needed
for a dual-band, multi-slot GSM radio design. SMARTi DC is
fabricated in the high-volume running, B6HFC 25GHz BiCMOS tech-
nology and is housed in VQFN 48 package.
S MAR Ti
F a mily: Wh at’s next
Further generations of SMARTi cellular transceivers are currently in
development and will maintain Infineon Technologies’ leading
position for cost-optimized, highly integrated SMARTi RF solutions.
Infineon Technologies’ leading class BiCMOS (B6HFc and B9C)
processes, and state of the art packaging facilities will further
increase performance and reduce system cost and size of a
SMARTi radio.
THE UPCOMING 3G system requires further innovation steps.
Infineon, as an experienced player in the mobile market will offer
such solutions, to follow the needs of the mobile community, soon.
THE DEVELOPMENT of solutions that fit the migration to 3G are on
the way. The SMARTi multi-mode will continue Infineon’s cellular RF
roadmap.