參數(shù)資料
型號: PM50302F
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel Power MOS FET Module(N溝道功率MOSFET模塊)
中文描述: 硅N溝道功率場效應(yīng)晶體管模塊(不適用溝道功率MOSFET的模塊)
文件頁數(shù): 2/8頁
文件大?。?/td> 65K
代理商: PM50302F
PM50302F
2
Outline
LF-F
Equivalent Circuit
No
S1
D1
S2
D2
G1
S1
G2
S2
Electrode
Source 1
Drain 1
Source 2
Drain 2
Gate 1
Source 1
Gate 2
Source 2
Terminals
M4 screw
M4 screw
M4 screw
M4 screw
#110
#110
#110
#110
Remarks
Power terminal
Signal terminals
D2
S2
D1
G2
S2
S1
G1
S1
D2
D1
S2
S1
G2
S2
G1
S1
Rg
Rg
Absolute Maximum Ratings
(Ta = 25°C) (Per FET chip)
Item
Symbol
Rating
Unit
Drain source voltage
V
DSS
V
GSS
I
D
I
D(peak)
I
DR
I
DR(peak)
Pch*
500
V
Gate source voltage
±20
V
Drain current
30
A
Drain peak current
60
A
Body to drain diode reverse drain current
30
A
Body to drain diode reverse drain peak current
60
A
Channel dissipation
1
200
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–45 to +125
°C
Insulation dielectric
Notes 1. Value at Tc = 25°C
2. Base to terminals AC minute
Visol*
2
2000
V
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