參數(shù)資料
型號(hào): PM50100K
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel Power MOS FET Module(N溝道功率MOSFET模塊)
中文描述: 硅N溝道功率場(chǎng)效應(yīng)晶體管模塊(不適用溝道功率MOSFET的模塊)
文件頁(yè)數(shù): 6/9頁(yè)
文件大?。?/td> 69K
代理商: PM50100K
PM50100K
6
Forward Transfer Admittance
vs. Drain Current
F
0.1
1
10
0.1
10
1
Drain Current I (A)
V = 10 V
Pulse Test
Ta = –25°C
75°C
25°C
V = 10 V
Pulse Test
100
100
f
Body to Drain Diode Reverse
Recovery Time
R
Reverse Drain Current I (A)
0.1
1
10
100
300
100
30
10
di/dt = 100 A/ s
V = 0 V
Pulse Test
r
1000
Typical Capacitance
vs. Drain to Source Voltage
C
100000
10000
1000
100
10
0
10
20
40
Drain to Source Voltage V (V)
P
Ciss
Coss
Crss
V = 10 V
f = 1 MHz
30
Dynamic Input Characteristics
500
400
300
200
100
D
0
80
160
240
320
400
Gate Charge Qg (nc)
G
D
G
20
16
12
8
4
0
V = 100 V
200 V
300 V
V = 300 V
200 V
100 V
V
GS
DS
V
I = 50 A
Pulse Test
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