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參數(shù)資料
| 型號(hào)： | PLB16012U |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | NPN microwave power transistor |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | METAL CERAMIC, SOT-437A, 3 PIN |
| 文件頁(yè)數(shù)： | 4/12頁(yè) |
| 文件大?。?/td> | 72K |
| 代理商： | PLB16012U |
1997 Feb 18
4
Philips Semiconductors
Product specification
NPN microwave power transistor
PLB16012U
THERMAL CHARACTERISTICS
Note
1.
See “Mounting recommendations in the General part of handbook SC19a”.
CHARACTERISTICS
T
mb
= 25
°
C unless otherwise specified.
APPLICATION INFORMATION
Microwave performance up to T
mb
= 25
°
C in a common base test circuit as shown in Fig.4 and working in CW
class C mode.
Note
1.
May be used for narrowband or broadband amplifiers within the frequency range 1.4 to 1.8 GHz. Operation below
1.4 GHz may damage the transistor due to resonance of the internal output prematching circuit.
List of components
(see Fig.4)
SYMBOL
PARAMETER
CONDITIONS
T
j
= 100
°
C
MAX.
UNIT
R
th j-mb
R
th mb-h
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink note 1
6
K/W
K/W
0.3
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
I
CBO
collector cut-off current
V
CB
= 28 V; I
E
= 0
V
CB
= 35 V; I
E
= 0
V
CE
= 28 V; R
BE
= 0
V
EB
= 1.5 V; I
C
= 0
0.3
0.6
0.6
25
mA
mA
mA
μ
A
I
CES
I
EBO
collector cut-off current
emitter cut-off current
MODE OF
OPERATION
f
(GHz)
V
CC
(V)
P
L
(W)
G
p
(dB)
≥
8
typ. 9.4
typ. 9.4
η
C
(%)
≥
45
typ. 60
typ. 60
Z
i
; Z
L
(
)
Class C (CW)
note 1
Class C - 100 ms 50%
1.6
28
10
see Figs 5 and 6
1.6
28
typ. 15
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
L1, L2
C1
C2
C3
C4
5 turns 0.2 mm diameter copper wire
DC blocking capacitor
feedthrough bypass capacitor
trimmer capacitor
electrolytic capacitor
int. dia. = 2 mm
100 pF
Erie, ref.1250-003
AT-3-7-271SL
0.6 - 4.5 pF
150
μ
F, 45 V
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