參數資料
| 型號： | PIC12F683-I/P |
| 廠商： | Microchip Technology |
| 文件頁數： | 150/176頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC MCU FLASH 2KX14 8DIP |
| 產品培訓模塊： | Asynchronous Stimulus 8-bit PIC® Microcontroller Portfolio |
| Digi-Key 應用說明： | AN0005 PWM Example with Microchip's CCP Module AN0005 Example Code |
| 標準包裝： | 60 |
| 系列： | PIC® 12F |
| 核心處理器： | PIC |
| 芯體尺寸： | 8-位 |
| 速度： | 20MHz |
| 外圍設備： | 欠壓檢測/復位，POR，PWM，WDT |
| 輸入/輸出數： | 5 |
| 程序存儲器容量： | 3.5KB（2K x 14） |
| 程序存儲器類型： | 閃存 |
| EEPROM 大小： | 256 x 8 |
| RAM 容量： | 128 x 8 |
| 電壓 - 電源 (Vcc/Vdd)： | 2 V ~ 5.5 V |
| 數據轉換器： | A/D 4x10b |
| 振蕩器型： | 內部 |
| 工作溫度： | -40°C ~ 85°C |
| 封裝/外殼： | 8-DIP（0.300"，7.62mm） |
| 包裝： | 管件 |
| 產品目錄頁面： | 645 (CN2011-ZH PDF) |
| 配用： | DM163029-ND - BOARD PICDEM FOR MECHATRONICS AC162058-ND - HEADER MPLAB ICD2 FOR PIC12F683 I3-DB12F683-ND - BOARD DAUGHTER ICEPIC3 ACICE0201-ND - MPLABICE 8P 300 MIL ADAPTER AC124001-ND - MODULE SKT PROMATEII 8DIP/SOIC |
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2007 Microchip Technology Inc.
DS41211D-page 73
PIC12F683
10.2
Reading the EEPROM Data
Memory
To read a data memory location, the user must write the
address to the EEADR register and then set control bit
RD of the EECON1 register, as shown in Example 10-1.
The data is available, at the very next cycle, in the
EEDAT register. Therefore, it can be read in the next
instruction. EEDAT holds this value until another read, or
until it is written to by the user (during a write operation).
EXAMPLE 10-1:
DATA EEPROM READ
10.3
Writing to the EEPROM Data
Memory
To write an EEPROM data location, the user must first
write the address to the EEADR register and the data
to the EEDAT register. Then the user must follow a
specific sequence to initiate the write for each byte, as
shown in Example 10-2.
EXAMPLE 10-2:
DATA EEPROM WRITE
The write will not initiate if the above sequence is not
exactly followed (write 55h to EECON2, write AAh to
EECON2, then set WR bit) for each byte. We strongly
recommend that interrupts be disabled during this
code segment. A cycle count is executed during the
required sequence. Any number that is not equal to the
required cycles to execute the required sequence will
prevent the data from being written into the EEPROM.
Additionally, the WREN bit in EECON1 must be set to
enable write. This mechanism prevents accidental
writes to data EEPROM due to errant (unexpected)
code execution (i.e., lost programs). The user should
keep the WREN bit clear at all times, except when
updating EEPROM. The WREN bit is not cleared
by hardware.
After a write sequence has been initiated, clearing the
WREN bit will not affect this write cycle. The WR bit will
be inhibited from being set unless the WREN bit is set.
At the completion of the write cycle, the WR bit is
cleared in hardware and the EE Write Complete
Interrupt Flag bit (EEIF) is set. The user can either
enable this interrupt or poll this bit. The EEIF bit of the
PIR1 register must be cleared by software.
10.4
Write Verify
Depending on the application, good programming
practice may dictate that the value written to the data
EEPROM should be verified (see Example 10-3) to the
desired value to be written.
EXAMPLE 10-3:
WRITE VERIFY
10.4.1
USING THE DATA EEPROM
The
data
EEPROM
is
a
high-endurance,
byte
addressable array that has been optimized for the
storage of frequently changing information (e.g.,
program variables or other data that are updated often).
When variables in one section change frequently, while
variables in another section do not change, it is possible
to exceed the total number of write cycles to the
EEPROM (specification D124) without exceeding the
total number of write cycles to a single byte
(specifications D120 and D120A). If this is the case,
then a refresh of the array must be performed. For this
reason, variables that change infrequently (such as
constants, IDs, calibration, etc.) should be stored in
Flash program memory.
BANKSEL
EEADR
;
MOVLW
CONFIG_ADDR ;
MOVWF
EEADR
;Address to read
BSF
EECON1,RD
;EE Read
MOVF
EEDAT,W
;Move data to W
BANKSEL
EECON1
;
BSF
EECON1,WREN
;Enable write
BCF
INTCON,GIE
;Disable INTs
BTFSC
INTCON,GIE
;See AN576
GOTO
$-2
;
MOVLW
55h
;Unlock write
MOVWF
EECON2
;
MOVLW
AAh
;
MOVWF
EECON2
;
BSF
EECON1,WR
;Start the write
BSF
INTCON,GIE
;Enable INTS
R
equ
ir
e
d
S
e
q
uen
ce
BANKSEL EEDAT
;
MOVF
EEDAT,W
;EEDAT not changed
;from previous write
BSF
EECON1,RD
;YES, Read the
;value written
XORWF
EEDAT,W
BTFSS
STATUS,Z
;Is data the same
GOTO
WRITE_ERR
;No, handle error
:
;Yes, continue
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相關代理商/技術參數 |
參數描述 |
|---|---|
| PIC12F683T-E/MD | 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:8-Pin Flash-Based, 8-Bit CMOS Microcontrollers with nanoWatt Technology |
| PIC12F683T-E/MDQTP | 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:8-Pin Flash-Based, 8-Bit CMOS Microcontrollers with nanoWatt Technology |
| PIC12F683T-E/MF | 功能描述:8位微控制器 -MCU 3.5KB 128 RAM 6 I/O RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數據總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數據 RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT |
| PIC12F683T-E/MFQTP | 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:8-Pin Flash-Based, 8-Bit CMOS Microcontrollers with nanoWatt Technology |
| PIC12F683T-E/P | 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:8-Pin Flash-Based, 8-Bit CMOS Microcontrollers with nanoWatt Technology |
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